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300mm Fab Spending to Boom Through 2023 with Two Record Highs
300mm fab investments in 2020 will grow by 13% year-over-year (YoY) to eclipse the previous record high set in 2018...



Global Semiconductor Sales in February Down 2.4 Percent
Demand in China slips significantly compared to January, reflecting early impacts of COVID-19 crisis



Imec Shows Scalable III-V And III-N Devices On Silicon
GaAs and GaN devices on silicon will enable 'beyond 5G' RF front-end modules






300mm Fab Spending to Boom Through 2023 with Two Record Highs

Nov 3, 2020

Chip industry to add 38 new 300mm fabs by 2024

300mm fab investments in 2020 will grow by 13% year-over-year (YoY) to eclipse the previous record high set in 2018 and log another banner year for the semiconductor industry in 2023, SEMI reported today in its 300mm Fab Outlook to 2024. The COVID-19 pandemic has sparked the 2020 surge in fab spending by accelerating digital transformations worldwide, and the increase is expected to stretch into 2021.

Powering the growth is rising demand for cloud services, servers, laptops, gaming and healthcare technology. Fast-evolving technologies such as 5G, Internet of Things (IoT), automotive, artificial intelligence (AI) and machine learning that continue to fuel demand for greater connectivity, large data centers and big data are also behind the increase.

“The COVID-19 pandemic is accelerating a digital transformation sweeping across nearly every industry imaginable to reshape the way we work and live,” said Ajit Manocha, SEMI president and CEO. “The projected record spending and 38 new fabs reinforce the role of semiconductors as the bedrock of leading-edge technologies that are driving this transformation and promise to help solve some of the world’s greatest challenges.”

Growth in semiconductor fab investments will continue in 2021 but at a slower rate of 4% YoY. Mirroring previous industry cycles, the report also predicts a mild slowdown in 2022 and another slight downturn in 2024 following a $70 billion record high in 2023.

Adding 38 New 300mm Fabs

The SEMI 300mm Fab Outlook to 2024 shows the chip industry adding at least 38 new 300mm volume fabs from 2020 to 2024, a conservative projection that does not factor in low-probability or rumored fab projects. During the same period, per-month fab capacity will grow by about 1.8 million wafers to reach over 7 million.

Under a high-probability project forecast, the industry will add at least 38 new 300mm volume fabs from 2019 to 2024. Taiwan will add 11 volume fabs and China eight to account for half of the total. The chip industry will command 161 300mm volume fabs by 2024.

Capacity and Spending Growth by Region

China will rapidly increase its global share of 300mm capacity, from 8% in 2015 to 20% in 2024, reaching 1.5 million 300mm wpm in the final year of the reporting period. While non-Chinese companies will account for a substantial portion of that growth, Chinese-owned organizations are accelerating their capacity investments. These companies will represent about 43% of China’s fab capacity in 2020, a proportion expected to reach 50% by 2022 and 60% by 2024.

Japan’s share of 300mm installed capacity continues to trend downward, from 19% in 2015 to 12% in 2024. The Americas’ share is also ticking lower, from 13% in 2015 to a projected 10% in 2024.

The biggest regional spenders will be Korea, with investments between US$15 billion and US$19 billion, followed by Taiwan, which will pour between US$14 billion and US$17 billion into 300mm fabs, and then China, with between US$11 billion and $13 billion in investments.

Regions spending less will see the steepest increases in investments between 2020 to 2024.  Europe/Mideast will lead the pack with impressive 164% growth, followed by Southeast Asia at 59%, Americas at 35%, and Japan at 20%.

Spending Growth by Product Sector

Memory accounts for the bulk of the increase in 300mm fab spending. Actual and forecast investments show a steady rise in the upper single digits for each year from 2020 to 2023, with a stronger increase of 10% in store for 2024.

DRAM and 3D NAND contributions to 300mm fab spending will be uneven from 2020 to 2024. Investments for logic/MPU, however, will see steady improvement from 2021 to 2023. Power-related devices will be the standout sector in 300mm fab investments, with over 200% growth in 2021 and double-digit increases in 2022 and 2023.

Tracking 286 fabs and lines from 2013 to 2024, the 300mm Fab Outlook to 2024 reflects 247 updates to 104 fabs, nine new fab and line listings, and two cancellations since the publication of the March 2020 report.

-- by SEMI® | Published on 11-03-2020

Global Semiconductor Sales in February Down 2.4 Percent

WASHINGTON—April 3, 2020—The Semiconductor Industry Association (SIA) today announced worldwide sales of semiconductors were $34.5 billion for the month of February 2020, a decrease of 2.4 percent from the January 2020 total of $35.4 billion, but a jump of 5.0 percent compared to the February 2019 total of $32.9 billion. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average. SIA represents semiconductor manufacturers, designers, and researchers, with members accounting for approximately 95 percent of U.S. semiconductor company sales and a large and growing share of global sales from non-U.S. firms.

“Global semiconductor sales in February were solid overall, outpacing sales from last February, but month-to-month demand in the China market slipped significantly and the full impact of the COVID-19 pandemic on the global market has yet to be captured in available sales numbers,” said John Neuffer, SIA president and CEO. “Semiconductors underpin our economy, infrastructure, and national security, and they are at the heart of many advanced technologies being used to find treatments, care for patients, and help people work and study from home.”

Regionally, month-to-month sales increased in Japan (6.9 percent) and Europe (2.4 percent), but decreased in Asia Pacific/All Other (-1.2 percent), the Americas (-1.4 percent), and China (-7.5 percent). Sales increased year-to-year in the Americas (14.2 percent), Japan (7.0 percent), and China (5.5 percent), but were down in Asia Pacific/All Other (-0.1 percent) and Europe (-1.8 percent).


-- by SIA | Semiconductor Industry Association

Published on 04-03-2020

Imec Shows Scalable III-V And III-N Devices On Silicon

Friday 10th January 2020

Imec, the Belgian research and innovation hub, has presented the first functional GaAs-based heterojunction bipolar transistor (HBT) devices on 300mm Si, and CMOS-compatible GaN-based devices on 200mm Si for mm-wave applications.

The results demonstrate the potential of both III-V-on-Si and GaN-on-Si as CMOS-compatible technologies for enabling RF front-end modules for beyond 5G applications. They were presented at last year's IEDM conference (Dec 2019, San Francisco) and will be featured in a keynote presentation of Imec's Michael Peeters about consumer communication beyond broadband at IEEE CCNC (10-13 Jan 2020, Las Vegas).

In wireless communication, with 5G as the next generation, there is a push towards higher operating frequencies, moving from the congested sub-6GHz bands towards mm-wave bands (and beyond). The introduction of these mm-wave bands has a significant impact on the overall 5G network infrastructure and the mobile devices. For mobile services and Fixed Wireless Access (FWA), this translates into increasingly complex front-end modules that send the signal to and from the antenna.

To be able to operate at mm-wave frequencies, the RF front-end modules will have to combine high speed (enabling data-rates of 10Gbps and beyond) with high output power. In addition, their implementation in mobile handsets puts high demands on their form factor and power efficiency. Beyond 5G, these requirements can no longer be achieved with today's most advanced RF front-end modules that typically rely on a variety of different technologies amongst others GaAs-based HBTs for the power amplifiers - grown on small and expensive GaAs substrates.

“To enable the next-generation RF front-end modules beyond 5G, Imec explores CMOS-compatible III-V-on-Si technology”, says Nadine Collaert, program director at Imec. “Imec is looking into co-integration of front-end components (such as power amplifiers and switches) with other CMOS-based circuits (such as control circuitry or transceiver technology), to reduce cost and form factor, and enabling new hybrid circuit topologies to address performance and efficiency. Imec is exploring two different routes: (1) InP on Si, targeting mm-wave and frequencies above 100GHz (future 6G applications) and (2) GaN-based devices on Si, targeting (in a first phase) the lower mm-wave bands and addressing applications in need of high power densities. For both routes, we have now obtained first functional devices with promising performance characteristics, and we identified ways to further enhance their operating frequencies.”

Functional GaAs/InGaP HBT devices grown on 300mm Si have been demonstrated as a first step towards the enablement of InP-based devices. A defect-free device stack with below 3x106cm-2 threading dislocation density was obtained by using Imec's unique III-V nano-ridge engineering (NRE) process. The devices perform considerably better than reference devices, with GaAs fabricated on Si substrates with strain relaxed buffer (SRB) layers. In a next step, higher-mobility InP-based devices (HBT and HEMT) will be explored.

The image above shows the NRE approach for hybrid III-V/CMOS integration on 300mm Si: (a) nano-trench formation; defects are trapped in the narrow trench region; (b) HBT stack growth using NRE and (c) different layout options for HBT device integration.

Moreover, CMOS-compatible GaN/AlGaN-based devices on 200mm Si have been fabricated comparing three different device architectures - HEMTs, MOSFETs and MISHEMTs. It was shown that MISHEMT devices outperform the other device types in terms of device scalability and noise performance for high-frequency operation. Peak cut-off frequencies of fT/fmax around 50/40 were obtained for 300nm gate lengths, which is in line with reported GaN-on-SiC devices. Besides further gate length scaling, first results with AlInN as a barrier material show the potential to further improve the performance, and hence, increase the operating frequency of the device to the required mm-wave bands.


-- Content from WEBINAR

Published on 06-01-2020


November 19-21, 2019


Worldwide Semiconductor Market is forecasted to be US$ 409 billion in 2019 - a decrease of 12.8 percent from 2018

The World Semiconductor Trade Statistics (WSTS) has released its new semiconductor market forecast generated in November 2019. WSTS expects the world semiconductor market to be down in 2019 to US$ 409 billion. This reflects expected decrease in almost all major categories, with an extraordinary decrease from Memory at 33.0 percent followed by Analog with 7.9 percent and Logic with 4.3 percent. In 2019, all geographical regions are expected to decrease.

For 2020, all regions are forecasted to grow with the overall market up 5.9 percent, with Optoelectronics contributing the highest growth followed by Logic.



-- Content from WSTS

by the fall 2019 Forecast Meeting

Published on 03-12-2019  6:30AM




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