E2-1-1011 Global Center, No.1700 Tianfu Avenue North, Chengdu 610041, China

Silicon Crystal
& Compound Semiconductor

Western Minmetals (SC) Corporation is a major supplier of CZ, MCZ, FZ & FZNTD 2-12 inch Single Crystalline Silicon material, 2-6 inch Germanium material in China.
Single Crystal Silicon and Germanium are widely used for the fabrication of diodes, transistors, discrete components, power devices, FETs, MOSFETs, IGBTs, and solar cells etc, and have significantly defined many cutting-edge technologies and fields as in Microelectronic, Optoelectronics, Photolithography and Photovoltaic industries.
Various compound semiconductor polycrystalline or mono-crystal materials are our main concerns, including Gallium Arsenide (GaAs), Gallium Phosphide (GaP), Gallium Antimonide (GaSb), Indium Arsenide (InAs), Indium Phosphide (InP), Indium Antimonide (InSb), Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride(AlN), Cadmium Telluride (CdTe), and Cadmium Zinc Telluride (CdZnTe) etc, which are proven to be highly valuable during innovations and manufacturing of LED or LD components, optoelectronic sensors, infrared detecting lens, high frequency communications, new energy automobiles, smart phones, biometric identification technique etc.
It is our goal to be a consistent, reliable and an affordable source for your material requirements at any time.

Single Crystal Silicon

CZ Silicon Wafer, FZ Silicon Wafer, FZNTD Silicon Wafer, Silicon-on-Insulator, Epitaxial (EPI) Silicon Wafer, IC Grade Silicon Ingot, Solar Single Crystal Silicon Ingot/ Wafer 2"3"4"5"6"8"12" etc

Print

Type & Grade

Description

Size

PDF

CZ Silicon Wafer

2" 3" 4" 5" 6" 8" 12"

CZ Single Crystal Silicon Wafer, with flexible resistivity range and thickness for different sizes, is for diodes, transistors, discrete components fabrication, and for diffusion, epitaxy or semi-insulating advanced wafer processes.

D(50.8-300)mm x

T(180-775)µm

FZ Silicon Wafer

2" 3" 4" 5" 6"

FZ Single Crystal Silicon Wafer, introducing vertical floating zone refining technology, mostly for electronic devices fabrication of power rectifier, thyristor, GTO, MOSFET, IGBT.

D(50.8-150)mm x

T(180-675)µm

FZ NTD Silicon Wafer

2" 3" 4" 5" 6"

FZ NTD Single Crystal Silicon Wafer, with high doping accuracy, high uniformity, small resistivity variation, lower impurity or compensation, is widely used for power rectifier, thyristor, GTO, MOSFET, IGBT electronic devices fabrication.

D(50.8-150)mm x

T(180-675)µm

Epitaxial Silicon Wafer

4" 6"

Epitaxial (EPI) Silicon Wafer adopts chemical vapor deposition (CVD) technology, and it can meet advanced requirements in microelectronics, photonics or photovoltaic industries. Homogeneous or heterogeneous epitaxial process is applicable.

D(100-150)mm x

Epi T(2.5-120)µm

Silicon-on-Insulator

6" 8"

Silicon-on-Insulator is of lower stray capacity, temperature dependency or leakage currents, but a much higher latchup resistance, power efficiency and a more stable radiation frequency during IC components design or manufacturing.

D150/200mm x

Device Layer T(0.07-100)µm

IC Grade Silicon Ingot

2" 3" 4" 5" 6" 8"

IC Grade Silicon Ingot with single crystalline structure can accurately be sliced by wire saw into circular wafer. These wafers are widely used for diode, triode, thyristor manufacturing in IC industry.

D(50.8-200)mm x

L≥150mm

Solar Silicon Wafer

6" 8"

Silicon Solar Wafer is proved to be a favorable material for high efficiency energy industry. 125x125mm, 156x156mm and 166x166mm are available.

125x125mm

156x156mm

166x166mm

Solar Silicon Ingot

6" 8" 9.5"

Solar Silicon Ingot with single crystal (mono crystalline) silicon structure. Wafer fabricated from the ingot can serve as a light-absorbing material and energy conversion channel in photovoltaic industry by forming solar cells, panels or PV systems.

125x125mm

156x156mm

166x166mm

Single Crystal Germanium

Germanium Wafer, Ultra Thin Germanium Wafer, Germanium Ingot

Print

Type & Grade

Description

Size

PDF

Single Crystal Germanium Wafer

2" 3" 4" 6"

Single Crystal Germanium Wafer, has doubled the average optical-electric power transmission ability compared to solar grade silicon cells when applied in photovoltaics industry such as solar cell or CPV system. 2" 3" 4" and 6" is available.

D(50.8-150)mm x

T(145/175)µm

Zone-refined Germanium Ingot

2" 3" 4" 6"

Zone-refined Germanium Ingot, silver grey metallic color trapezoid metal poly crystalline ingot, purity over 99.999%, mainly used for fabrication of single crystal Ge ingot or wafer, Si-Ge alloy and other Ge based materials in semiconductor and infrared optical industries. 2" 3" 4" 6" are available.

D(50.8-150)

L(140-300)mm



Compound Semiconductors

GaAs, GaSb, GaP, InSb, InAs, InP, GaN, SiC, CdTe, CdZnTe

Print

Type & Grade

Description

Size

PDF

Gallium Arsenide GaAs

2" 3" 4" 6"

Gallium Arsenide (GaAs) substrate is formed by high purity Gallium and Arsenic elements, extensively used for LED or LD application in the optoelectronic and microelectronic industries.

ŒD(50.8-150)mm

    x T(350-650)μm

Poly/Single

    Crystal GaAs

Gallium Antimonide GaSb

2" 3" 4"

Gallium Antimonide (GaSb) substrate is compound by high purity Gallium and Antimony elements which can be widely applied for optoelectronics industry. Polycrystalline and mono crystalline of GaSb bar is available.

ŒD(50.8-100)mm

    x T(500-1000)μm

Poly/Single

    Crystal GaSb

Gallium Phosphide GaP

2"

Gallium Phosphide (GaP) is formed by high purity Gallium and Phosphorus, which is widely used for LED industry. Polycrystalline and mono crystalline of GaP bar is available.

ŒD50.8mm x

    T(300-400)μm

Poly/Single

    Crystal GaP

Indium Arsenide InAs

2" 3" 4"

Indium Arsenide (InAs) substrate is compound by high purity Indium and Arsenic elements which can be adopted in optoelectronics industry. Polycrystalline and mono crystalline of InAs bar is available.

ŒD(50.8-100)mm

    x T(500-800)μm

Poly/Single

    Crystal InAs

Indium Antimonide InSb

2" 3"

Indium Antimonide (InSb) substrate is compound by high purity Indium and Antimony elements, mostly being used for meteorology civil applications. Polycrystalline and mono crystalline of InSb is available.

ŒD(50.8-76.2)mm

    x T(500-600)μm

Poly/Single

    Crystal InSb

Indium Phosphide InP

2"

Indium Phosphide (InP) substrate is compound by high purity Indium and Phosphorus elements which can be widely used for Opto-electronic civil industries. Polycrystalline and mono crystalline of InP is available.

ŒD(50.8-100)mm

    x T(300-600)μm

Poly/Single

    Crystal InP

Gallium Nitride GaN

2" 4"

Gallium Nitride Substrate (GaN) is grown by HVPE method which can be widely used for the new type high speed and high capacity LED components fabrication.

D(50.8/100)mm x

T(4.5/20/350)μm

Silicon Carbide SiC

2" 3" 4" 6"

Silicon Carbide Substrate (SiC), is an outstanding new generation wide bandgap semiconductor with favorable characteristics, which can be widely applied for aeronautics and astronautics, trail transit, photovoltaic and electric power transmission.

D(50.8-150)mm x

T(330-500)μm

Cadmium Telluride CdTe

5N 6N 7N

Cadmium Telluride (CdTe) Substrate is compound of high purity Cadmium and Tellurium, which can be widely used for PIN semiconductor structure, Polycrystalline and mono crystalline of CdTe bar is available.

ŒD(5x5,10x10)mm

    x T(0.5/1/3)mm

Poly/Single

    Crystal CdTe

Cadmium Zinc Telluride CdZnTe (CZT)

5N 6N 7N

Cadmium Zinc Telluride (CdZnTe, CZT), with excellent electrical properties, high absorption coefficient and moderate thermal expansion rate, is widely used for infrared ray guiding components and other civil security applications.

ŒD(10x10, 14x14,

    25x25)mm

Poly/Single

    Crystal CdZnTe

: Peking

, Friday

sales@matltech.com

Copyright © 2019-2023    Western Minmetals (SC) Corporation    Powered by www.cdsok.com.cn    蜀ICP备05012004号