wmk_product_02

100% Original Device Layer - Gallium Nitride GaN – WMC


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No. Items Standard Specification
1 Shape Circular Circular Square
2 Size 2″ 4″
3 Diameter mm 50.8±0.5 100±0.5
4 Side Length mm 10×10 or 10×5
5 Growth Method HVPE HVPE HVPE
6 Orientation C-plane (0001) C-plane (0001) C-plane (0001)
7 Conductivity Type N/(Si-doped or un-doped), Semi-insulating
8 Resistivity Ω-cm <0.1, <0.05, >1E6
9 Thickness μm 350±25 350±25 350±25
10 TTV μm max 15 15 15
11 Bow μm max 20 20 20
12 EPD cm-2 <5E8 <5E8 <5E8
13 Surface Finish P/E, P/P P/E, P/P P/E, P/P
14 Surface Roughness Front: ≤0.2nm, Back: 0.5-1.5μm or ≤0.2nm
15 Packing Single wafer container sealed in Aluminum bag.
Linear Formula GaN
Molecular Weight 83.73
Crystal structure Zinc blende or Wurtzite
Apperance Translucent solid
Melting Point 2500 °C
Boiling Point N/A
Density at 300K 6.15 g/cm3
Energy Gap (3.2-3.29) eV at 300K
Intrinsic resistivity >1E8 Ω-cm
CAS Number 25617-97-4
EC Number 247-129-0
  • Sample Available Upon Request
  • Safety Delivery of Goods By Courier/Air/Sea
  • COA/COC Quality Management
  • Secure & Convenient Packing
  • UN Standard Packing Available Upon Request
  • Quality Inspection Including XRD/SEM/ICP/GDMS etc
  • Full Scope of Trade Terms CPT/FOB/ CFR/CIP By Incoterms 2010
  • Flexible Payment Terms T/T D/P L/C Acceptable
  • Full Dimensional After-Sale Services
  • ISO9001:2015 Certified & Rohs/REACH Regulations Approval
  • Non-Disclosure Agreements
  • Non-Conflict Mineral Policy
  • Regular Environmental Management Review
  • Social Responsibility Fulfillment
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