| No. |
Items |
Standard Specification |
| 1 |
Size |
2″ |
3″ |
4″ |
6″ |
| 2 |
Diameter mm |
50.8±0.3 |
76.2±0.3 |
100±0.5 |
150±0.5 |
| 3 |
Growth Method |
VGF |
VGF |
VGF |
VGF |
| 4 |
Conductivity Type |
P/Zn, N/Si, Semi-insulating |
| 5 |
Orientation |
(100)±0.5° |
(100)±0.5° |
(100)±0.5° |
(100)±0.5° |
| 6 |
Thickness μm |
350±25 |
625±25 |
625±25 |
650±25 |
| 7 |
Orientation Flat mm |
17±1 |
22±1 |
32±1 |
Notch |
| 8 |
Identification Flat mm |
7±1 |
12±1 |
18±1 |
- |
| 9 |
Resistivity Ω-cm |
(1-9)E(-3) for P or N, (1-10)E8 for semi-insulating |
| 10 |
Mobility cm2/v.s |
50-120 for P, (1-2.5)E3 for N; ≥4000 for semi-insulating |
| 11 |
Carrier Concentration cm-3 |
(5-50)E18 for P; (0.8-4)E18 for N |
| 12 |
TTV μm max |
10 |
10 |
10 |
10 |
| 13 |
Bow μm max |
30 |
30 |
30 |
30 |
| 14 |
Warp μm max |
30 |
30 |
30 |
30 |
| 15 |
EPD cm-2 |
5000 |
5000 |
5000 |
5000 |
| 16 |
Surface Finish |
P/E, P/P |
P/E, P/P |
P/E, P/P |
P/E, P/P |
| 17 |
Packing |
Single wafer container sealed in Aluminum bag. |
| 18 |
Mechanical Grade GaAs wafer regardless of electronic specifications also available. |
