100% Original High Purity Cdas 99.999% - Zinc Telluride ZnTe | Cu2Te GeTe InTe PbTe – WMC

Telluride Compounds

Telluride Compounds refer to the metal elements and metalloid compounds, which have stoichiometric composition changing within a certain range to form a compound-based solid solution. Inter-metallic compound is of its excellent properties between the metal and ceramic, and become an important branch of the new structural materials. Telluride compounds of Antimony Telluride Sb₂Te₃, Aluminum Telluride Al₂Te₃, Arsenic Telluride As₂Te₃, Bismuth Telluride Bi₂Te₃, Cadmium Telluride CdTe, Cadmium Zinc Telluride CdZnTe, Cadmium Manganese Telluride CdMnTe or CMT, Copper Telluride Cu₂Te, Gallium Telluride Ga₂Te₃, Germanium Telluride GeTe,  Indium Telluride InTe, Lead Telluride PbTe, Molybdenum Telluride MoTe₂, Tungsten Telluride WTe₂ and its (Li, Na, K, Be, Mg, Ca) compounds and Rare Earth compounds can be synthesized in form of powder, granule, lump, bar, substrate, bulk crystal and single crystal…

Zinc Telluride ZnTe 5N 99.999% and Copper Telluride Cu₂Te, Germanium Telluride GeTe,  Indium Telluride InTe, Lead Telluride PbTe with 4N 99.99% and 5N 99.999% purity at Western Minmetals (SC) Corporation  can be delivered in form of powder -60mesh, -80mesh, granule 1-6mm, lump 1-20mm, chunk, bulk crystal, rod and substrate etc or as customized specification to reach perfect solution.

Copper Telluride

Copper Telluride Cu₂Te, light gray-black appreance, CAS 12019-52-2, MW 254.692, density 7.27g/cm³, melting point 900°C, odorless, is a transition metal chalcogenide and 2D layered material, and stable in air at room temperature. Copper Telluride Cu₂Te crystal compound with single crystal orthorhombic structure, is successfully synthesized by using an electrochemical method and  a straightforward approach based on chemical deposition method CVD, it has fascinating physical, chemical, mechanical, electronic, photoelectric and thermal properties for various technological applications in optics, catalysis, energy storage, electronic devices and sensors, mainly used in precision semiconductor and optoelectronic materials. Copper Telluride at Western Minmetals (SC) Corporation with 99.99% 4N, 99.999% 5N purity are available in form of powder, granule, lump, chunk, bulk crystal and rod etc or as customized specification for industry and research purposes.

Indium Telluride

Indium Telluride InTe, molecular weight 242.4, density of 6.29 g/cm³, melting point is 696°C, black or blue-gray crystal, is stable in air, insoluble in hydrochloric acid and soluble in nitric acid. Heating in vacuum is easy to volatilize, and the vapor is stable and does not decompose. Indium Telluride has strong anisotropy and metal conductivity. Indium Telluride InTe, a compound semiconductor, which structure of tetragonal crystal is lamellar, prepared by chemical vapor deposition CVD process or by Bridgeman method with direct reaction of indium and tellurium. The only commercially available layered InTe crystal, which has band-gap at around 0.6 eV and display strong photoluminescence. Indium Telluride is generally n-type material, and mainly used in semiconductor industry, sensor parts, lens coating, and for making infrared detectors, or other research purpose. Indium Telluride InTe 99.99% 4N, 99.999% 5N purity at Western Minmetals (SC) Corporation are available in form of powder, lump, granule, lump, bulk crystal and rod etc for industry applications.

Germanium Telluride

Germanium Telluride GeTe, is black crystal, CAS 12025-39-7, MW 200.24, density 6.14g/cm³, melting point 725°C, and insoluble in water. Germanium Telluride crystal is an ionic crystal and compound semiconductor, which has a direct band gap of 0.23eV wide at room temperature, and belongs to narrow energy gap semiconductor. It is stable under normal temperature and pressure, and shows semimetallic conduction and ferroelectric. There are three major crystalline forms of this product, room-temperature α (rhombohedral) and γ (orthorhombic) structures and high-temperature β (cubic, rocksalt-type) phase, α phase being most common one. Germanium Telluride, a novel 2D material, has attracted much attention due to its excellent electronic and optical properties. The preparation of Germanium Telluride is by heating Germanium and Tellurium to their melting point in a vacuum quartz tube and recrystallizing to obtain GeTe, but single crystal GeTe can be obtained by zone floating method. It is used as a material for infrared light emission and detection. Meanwhile, Germanium telluride is a well-known phase change material PCM used in non-volatile memory cells and radio frequency switches. Germanium Telluride at Western Minmetals (SC) Corporation can be delivered with 99.99% 4N, 99.999% 5N purity in form of powder, lump, chunk, bulk crystal chunk and rod etc or as customized specification.

Lead Telluride

Lead Telluride PbTe, CAS 1314-91-6, MW 334.80, melting point 905°C, Insoluble in water and acid, ionic crystal, is a direct band gap semiconductor with band gap width of 0.32ev at room temperature. The materials of PbTe is prepared by Bridgeman method, chemical mechanical deposition method and sublimation recrystallization method. Lead Telluiide PbTe is a polar semiconductor crystallizing in the rocksalt-type lattice, exhibits unusual properties relative to other semiconductors which possess high dielectric constant, high mobility, and narrow fundamental gaps whose temperature coefficient is positive. Lead Telluride is of technical importance for use in a variety of infrared optoelectronic device, infrared photodetector application, and for very low threshold-current laser diodes, and can also be used as thermoelectric materials. Lead Telluride PbTe at Western Mimetals (SC) Corporation can be delivered in 99.99% 4N, 99.999% 5N purity with form of powder, granule, lump, chunk, bulk crystal and rod etc or as customized specification for industry and research purposes.

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