No. | Items | Standard Specification | ||
1 | Size | 2″ | 3″ | 4″ |
2 | Diameter mm | 50.5±0.5 | 76.2±0.5 | 100±0.5 |
3 | Growth Method | LEC | LEC | LEC |
4 | Conductivity | P/(Zn-doped or un-doped), N/Te-doped | ||
5 | Orientation | (100)±0.5°, (111)±0.5° | ||
6 | Thickness μm | 500±25 | 600±25 | 800±25 |
7 | Orientation Flat mm | 16±2 | 22±1 | 32.5±1 |
8 | Identification Flat mm | 8±1 | 11±1 | 18±1 |
9 | Mobility cm2/V.s | 200-3500 or as required | ||
10 | Carrier Concentration cm-3 | (1-100)E17 or as required | ||
11 | TTV μm max | 15 | 15 | 15 |
12 | Bow μm max | 15 | 15 | 15 |
13 | Warp μm max | 20 | 20 | 20 |
14 | Dislocation Density cm-2 max | 500 | 1000 | 2000 |
15 | Surface Finish | P/E, P/P | P/E, P/P | P/E, P/P |
16 | Packing | Single wafer container sealed in Aluminum bag. |
Linear Formula | InSb |
Molecular Weight | 236.58 |
Crystal structure | Zinc blende |
Apperance | Dark grey metallic crystals |
Melting Point | 527 °C |
Boiling Point | N/A |
Density at 300K | 5.78 g/cm3 |
Energy Gap | 0.17 eV |
Intrinsic resistivity | 4E(-3) Ω-cm |
CAS Number | 1312-41-0 |
EC Number | 215-192-3 |