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2021 wholesale price Insb Substrates - Gallium Antimonide GaSb – WMC


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Gallium Antimonide GaSb substrate is being utilized in the most cutting-edge photo-optic and optoelectronic applications such as the fabrications of photo detectors, infrared detectors with long life, high sensitivity and reliability, photoresist component, infrared LEDs and lasers, transistors, thermal photovoltaic cell and thermo-photovoltaic systems.  

Items Standard Specification
1 Size 2″ 3″ 4″
2 Diameter mm 50.5±0.5 76.2±0.5 100±0.5
3 Growth Method LEC LEC LEC
4 Conductivity P-type/Zn-doped, Un-doped, N-type/Te-doped
5 Orientation (100)±0.5°, (111)±0.5°
6 Thickness μm 500±25 600±25 800±25
7 Orientation Flat mm 16±2 22±1 32.5±1
8 Identification Flat mm 8±1 11±1 18±1
9 Mobility cm2/V.s 200-3500 or as required
10 Carrier Concentration cm-3 (1-100)E17 or as required
11 TTV μm max 15 15 15
12 Bow μm max 15 15 15
13 Warp μm max 20 20 20
14 Dislocation Density cm-2 max 500 1000 2000
15 Surface Finish P/E, P/P P/E, P/P P/E, P/P
16 Packing Single wafer container sealed in Aluminum bag.
Linear Formula GaSb
Molecular Weight 191.48
Crystal structure Zinc blende
Appearance Gray crystalline solid
Melting Point 710°C
Boiling Point N/A
Density at 300K 5.61 g/cm3
Energy Gap 0.726 eV
Intrinsic resistivity 1E3 Ω-cm
CAS Number 12064-03-8
EC Number 235-058-8
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  • Regular Environmental Management Review
  • Social Responsibility Fulfillment
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