Gallium Arsenide GaAs wafers are principally used to fabricate electronic devices such as infrared light-emitting diodes, laser diodes, optical windows, field-effect transistors FETs, linear of digital ICs and solar cells. GaAs components are useful in ultra-high radio frequencies and fast electronic switching application, weak-signal amplification applications. Furthermore, Gallium Arsenide substrate is a ideal material for the manufacture of RF components, microwave frequency and monolithic ICs, and LEDs devices in optical communications and control systems for its saturating hall mobility, high power and temperature stability.
| No. | Items | Standard Specification | |||
| 1 | Size | 2″ | 3″ | 4″ | 6″ |
| 2 | Diameter mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 150±0.5 |
| 3 | Growth Method | VGF | VGF | VGF | VGF |
| 4 | Conductivity Type | N-Type/Si or Te-doped, P-Type/Zn-doped, Semi-Insulating/Un-doped | |||
| 5 | Orientation | (100)±0.5° | (100)±0.5° | (100)±0.5° | (100)±0.5° |
| 6 | Thickness μm | 350±25 | 625±25 | 625±25 | 650±25 |
| 7 | Orientation Flat mm | 17±1 | 22±1 | 32±1 | Notch |
| 8 | Identification Flat mm | 7±1 | 12±1 | 18±1 | - |
| 9 | Resistivity Ω-cm | (1-9)E(-3) for p-type or n-type, (1-10)E8 for semi-insulating | |||
| 10 | Mobility cm2/v.s | 50-120 for p-type, (1-2.5)E3 for n-type, ≥4000 for semi-insulating | |||
| 11 | Carrier Concentration cm-3 | (5-50)E18 for p-type, (0.8-4)E18 for n-type | |||
| 12 | TTV μm max | 10 | 10 | 10 | 10 |
| 13 | Bow μm max | 30 | 30 | 30 | 30 |
| 14 | Warp μm max | 30 | 30 | 30 | 30 |
| 15 | EPD cm-2 | 5000 | 5000 | 5000 | 5000 |
| 16 | Surface Finish | P/E, P/P | P/E, P/P | P/E, P/P | P/E, P/P |
| 17 | Packing | Single wafer container sealed in aluminum composite bag. | |||
| 18 | Remarks | Mechanical grade GaAs wafer is also available upon request. | |||
| Linear Formula | GaAs |
| Molecular Weight | 144.64 |
| Crystal structure | Zinc blende |
| Appearance | Gray crystalline solid |
| Melting Point | 1400°C, 2550°F |
| Boiling Point | N/A |
| Density at 300K | 5.32 g/cm3 |
| Energy Gap | 1.424 eV |
| Intrinsic resistivity | 3.3E8 Ω-cm |
| CAS Number | 1303-00-0 |
| EC Number | 215-114-8 |
- Sample Available Upon Request
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- Non-Conflict Mineral Policy
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- Social Responsibility Fulfillment
