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Cadmium Arsenide Cd₃As₂ | GaAs InAs Nb₃As₂

Description

Cadmium Arsenide Cd₃As₂5N 99.999%, dark grey color, with density 6.211g/cm³, melting point 721°C, molecule 487.04, CAS12006-15-4, soluble in nitric acid HNO₃ and stability in air, is a synthesized compound material of high purity cadmium and arsenic. Cadmium Arsenide is an inorganic semimetal in the II-V family and exhibits the Nernst Effect. Cadmium Arsenide crystal grown by Bridgman growth method, non-layered bulk Dirac semimetal structure, is a degenerate N-type II-V semiconductor or a narrow-gap semiconductor with high carrier mobility, low-effective mass, and a highly non-parabolic conduction band. Cadmium Arsenide Cd₃As₂or CdAs is a crystalline solid and finds more and more application in a semiconductor and in photo optic field such as in infrared detectors using the Nernst effect, in thin-film dynamic pressure sensors, laser, light-emitting diodes LED, quantum dots, to make magnetoresistors and in photodetectors. Arsenide compounds of Arsenide GaAs, Indium Arsenide InAs and Niobium Arsenide NbAs or Nb₅As₃find more application as electrolyte material, semiconductor material, QLED display, IC field and other material fields.

Delivery

Cadmium Arsenide Cd₃As₂ and Gallium Arsenide GaAs, Indium Arsenide InAs and Niobium Arsenide NbAs or Nb₅As₃ at Western Minmetals (SC) Corporation with 99.99% 4N and 99.999% 5N purity is in size of polycrystalline micropowder -60mesh, -80mesh, nanoparticle, lump 1-20mm, granule 1-6mm, chunk, blank, bulk crystal and single crystal etc., or as customized specification to reach the perfect solution.

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Technical Specification

Arsenide Compounds

Arsenide Compounds mainly refer to the metal elements and metalloid compounds, which have stoichiometric composition changing within a certain range to form a compound-based solid solution. Inter-metallic compound is of its excellent properties between the metal and ceramic, and become an important branch of the new structural materials. Besides Gallium Arsenide GaAs, Indium Arsenide InAs and Niobium Arsenide NbAs or Nb₅As₃can also be synthesized in form of powder, granule, lump, bar, crystal and substrate.

No.	Item	Standard Specification
No.	Item	Purity	Impurity PPM Max each	Size
1	Cadmium ArsenideCd₃As₂	5N	Ag/Cu/Ca/Mg/Sn/Fe/Cr/Bi 0.5, Ni/S 0.2, Zn/Pb 1.0	-60mesh -80mesh powder, 1-20mm lump, 1-6mm granule
2	Gallium Arsenide GaAs	5N 6N 7N	GaAs Composition is available upon request
3	Niobium Arsenide NbAs	3N5	NbAs Composition is available upon request
4	Indium Arsenide InAs	5N 6N	InAs Composition is available upon request
5	Packing	500g or 1000g in polyethylene bottle or composite bag, carton box outside

Gallium Arsenide

Gallium Arsenide GaAs, a III–V compound direct-gap semiconductor material with a zinc blende crystal structure, is synthesized by high purity gallium and arsenic elements, and can be sliced and fabricated into wafer and blank from single crystalline ingot grown by Vertical Gradient Freeze (VGF) method. Thanks to its saturating hall mobility and high power & temperature stability, those RF components, microwave ICs & LED devices made by it all achieve great performance in their high frequency communication scenes. Meanwhile, its UV light transmission efficiency also allows it to be a proven basic material in Photovoltaic industry. Gallium Arsenide GaAs wafer at Western Minmetals (SC) Corporation can be delivered up to 6" or 150mm in diameter with 6N 7N purity, and Gallium Arsenide mechanical grade substrate are also available. Meanwhile, Gallium Arsenide polycrystalline bar, lump and granule etc with purity of 99.999% 5N, 99.9999% 6N, 99.99999% 7N provided from Western Minmetals (SC) Corporation are also available or as customized specification upon request.

Indium Arsenide

Indium Arsenide InAs, a direct-band-gap semiconductor crystallizing in the zinc-blende structure, compound by high purity indium and arsenic elements, grown by Liquid Encapsulated Czochralski (LEC) method, can be sliced into and fabricated into wafer from single crystalline ingot. Due to the low dislocation density but constant lattice, InAs is an ideal substrate to further support the heterogeneous InAsSb, InAsPSb & InNAsSb structures, or AlGaSb superlattice structure. Therefore, it plays an important role in 2-14 μm wave range infrared emitting devices fabrication. Besides, the supreme hall mobility but narrow energy bandgap of InAs also allows it to become the great substrate for hall components or other laser & radiation devices manufacturing. Indium Arsenide InAs at Western Minmetals (SC) Corporation with purity of 99.99% 4N, 99.999% 5N, 99.9999% 6N can be delivered in substrate of 2" 3" 4" in diameter. Meanwhile, Indium Arsenide polycrystalline lump at Western Minmetals (SC) Corporation is also available or as customized specification upon request.

Niobium Arsenide

Niobium Arsenide Nb₅As₃ or NbAs, off-white or grey crystalline solid, CAS No.12255-08-2, formula weight 653.327 Nb₅As₃ and 167.828 NbAs, is a binary compound of Niobium and Arsenic with the composition NbAs,Nb5As3, NbAs4 …etc synthesized by CVD method, these solid salts have very high lattice energies and are toxic due to the inherent toxicity of arsenic. High temperature thermal analysis shows NdAs exhibited arsenic volatilization upon heating. Niobium Arsenide, a Weyl semimetal, is a type of semiconductor and photoelectric material in applications for semiconductor, photo optic, laser light-emitting diodes, quantum dots, optical and pressure sensors, as intermediates, and to fabricate superconductor etc. Niobium Arsenide Nb₅As₃ or NbAs at Western Minmetals (SC) Corporation with purity of 99.99% 4N can be delivered in shape of powder, granule, lump, target and bulk crystal etc or as customized specification, which should be kept in a well-closed, light-resistant, dry and cool place.