No. | Items | Standard Specification | ||
1 | General Characteristics | |||
1-1 | Size | 4″ | 5″ | 6″ |
1-2 | Diameter mm | 100±0.5 | 125±0.5 | 150±0.5 |
1-3 | Orientation | (100) or (111) | (100) or (111) | (100) or (111) |
2 | Epitaxial Layer Characteristics | |||
2-1 | Growth Method | CVD | CVD | CVD |
2-2 | Conductivity Type | P or P+, N/ or N+ | P or P+, N/ or N+ | P or P+, N/ or N+ |
2-3 | Thickness μm | 2.5-120 | 2.5-120 | 2.5-120 |
2-4 | Thickness Uniformity | ≤3% | ≤3% | ≤3% |
2-5 | Resistivity Ω-cm | 0.1-50 | 0.1-50 | 0.1-50 |
2-6 | Resistivity Uniformity | ≤3% | ≤5% | - |
2-7 | Dislocation cm-2 | <10 | <10 | <10 |
2-8 | Surface Quality | No chip, haze or orange peel remains, etc. | ||
3 | Handle Substrate Characteristics | |||
3-1 | Growth Method | CZ | CZ | CZ |
3-2 | Conductivity Type | P/N | P/N | P/N |
3-3 | Thickness μm | 525-675 | 525-675 | 525-675 |
3-4 | Thickness Uniformity max | 3% | 3% | 3% |
3-5 | Resistivity Ω-cm | As required | As required | As required |
3-6 | Resistivity Uniformity | 5% | 5% | 5% |
3-7 | TTV μm max | 10 | 10 | 10 |
3-8 | Bow μm max | 30 | 30 | 30 |
3-9 | Warp μm max | 30 | 30 | 30 |
3-10 | EPD cm-2 max | 100 | 100 | 100 |
3-11 | Edge Profile | Rounded | Rounded | Rounded |
3-12 | Surface Quality | No chip, haze or orange peel remains, etc. | ||
3-13 | Back Side Finish | Etched or LTO (5000±500Å) | ||
4 | Packing | Cassette inside, carton box outside. |
Symbol | Si |
Atomic Number | 14 |
Atomic Weight | 28.09 |
Element Category | Metalloid |
Group, Period, Block | 14, 3, P |
Crystal structure | Diamond |
Color | Dark gray |
Melting Point | 1414°C, 2577.2°F, 1687.15 K |
Boiling Point | 3265°C, 5909°F, 3538.15 K |
Density at 300K | 2.329 g/cm3 |
Intrinsic resistivity | 3.2E5 Ω-cm |
CAS Number | 7440-21-3 |
EC Number | 231-130-8 |