China Supplier Resistivity Ranges - Indium Antimonide InSb – WMC

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Indium Antimonide InSb n-type, p-type and semi-insulating conductivity at Western Minmetals (SC) Corporation can be offered in size of 2” 3” and 4” (50mm, 75mm, 100mm) diameter, orientation <111> or <100>, and with wafer surface finish of as-cut, etched, polished finishes. Meanwhile, polycrystalline indium antimonide InSb lump is also customized upon request to the perfect solution.

No.	Items	Standard Specification
1	InSb Size	2″	3″	4″
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Growth Method	LEC	LEC	LEC
4	Conductivity	P-type/Zn,Ge doped, N-type/Te-doped, Un-doped
5	Orientation	(100)±0.5°, (111)±0.5°
6	Thickness μm	500±25	600±25	800±25
7	Orientation Flat mm	16±2	22±1	32.5±1
8	Identification Flat mm	8±1	11±1	18±1
9	Mobility cm2/V.s	200-3500 or as required
10	Carrier Concentration cm-3	(1-100)E17 or as required
11	TTV μm max	15	15	15
12	Bow μm max	15	15	15
13	Warp μm max	20	20	20
14	Dislocation Density cm-2 max	500	1000	2000
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Packing	Single wafer container sealed in Aluminum bag.

Linear Formula	InSb
Molecular Weight	236.58
Crystal structure	Zinc blende
Appearance	Dark grey metallic crystals
Melting Point	527 °C
Boiling Point	N/A
Density at 300K	5.78 g/cm³
Energy Gap	0.17 eV
Intrinsic resistivity	4E(-3) Ω-cm
CAS Number	1312-41-0
EC Number	215-192-3

Indium Antimonide InSb wafer is one ideal substrate for the production of many state-of-art components and devices, such as advanced thermal imaging solution, FLIR system, hall element and magnetoresistance effect element, infrared homing missile guidance system, highly-responsive Infrared photodetector sensor, high-precision magnetic and rotary resistivity sensor, focal planar arrays, and also adapted as a terahertz radiation source and in infrared astronomical space telescope etc.