China wholesale Fz-Ntd - FZ NTD Silicon Wafer – WMC

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As a market leading supplier of NTD silicon for promising power applications, and following the growing demands for top quality level wafers, superior FZ NTD silicon wafer at Western Minmetals (SC) Corporation can be offered to our customers worldwide in various size ranging from 2″, 3″, 4″, 5″ and 6″ diameter (50mm, 75mm, 100mm, 125mm and 150mm) and wide range of resistivity 5 ohm-cm to 2000 ohm-cm in <1-1-1>, <1-1-0>, <1-0-0> orientations with as-cut, lapped, etched and polished surface finish in package of foam box or cassette, or as customized specification to the perfect solution.

No.	Items	Standard Specification
1	Size	2″	3″	4″	5″	6″
2	Diameter	50.8±0.3	76.2±0.3	100±0.5	125±0.5	150±0.5
3	Conductivity	n-type	n-type	n-type	n-type	n-type
4	Orientation	<100>, <111>, <110>
5	Thickness μm	279, 381, 425, 525, 575, 625, 675, 725 or as required
6	Resistivity Ω-cm	36-44, 44-52, 90-110, 100-250, 200-400 or as required
7	RRV max	8%, 10%, 12%
8	TTV μm max	10	10	10	10	10
9	Bow/Warp μm max	30	30	30	30	30
10	Carrier Lifetime μs	>200， >300， >400 or as required
11	Surface Finish	As-cut，Lapped，Polished
12	Packing	Foam box inside, carton box outside.

Symbol	Si
Atomic Number	14
Atomic Weight	28.09
Element Category	Metalloid
Group, Period, Block	14, 3, P
Crystal structure	Diamond
Color	Dark gray
Melting Point	1414°C, 2577.2°F, 1687.15 K
Boiling Point	3265°C, 5909°F, 3538.15 K
Density at 300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
CAS Number	7440-21-3
EC Number	231-130-8

FZ-NTD Silicon Wafer is a paramount importance for applications in high power, detector technologies and in semiconductor devices that have to work in extreme conditions or where low resistivity variation across the wafer is required, such as gate-turn-off thyristor GTO, static induction thyristor SITH, giant transistor GTR, insulate-gate bipolar transistor IGBT, extra HV diode PIN. FZ NTD n-type silicon wafer is also as main functional material for various frequency converters, rectifiers, large-power control elements, new power electronic devices, photoelectronic devices, silicon rectifier SR, silicon control SCR, and optical components such as lenses and windows for terahertz applications.