Competitive Price for Ingot - Epitaxial (EPI) Silicon Wafer – WMC

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Details

No.	Items	Standard Specification
1	General Characteristics
1-1	Size	4″	5″	6″
1-2	Diameter mm	100±0.5	125±0.5	150±0.5
1-3	Orientation	(100) or (111)	(100) or (111)	(100) or (111)
2	Epitaxial Layer Characteristics
2-1	Growth Method	CVD	CVD	CVD
2-2	Conductivity Type	P or P+, N/ or N+	P or P+, N/ or N+	P or P+, N/ or N+
2-3	Thickness μm	2.5-120	2.5-120	2.5-120
2-4	Thickness Uniformity	≤3%	≤3%	≤3%
2-5	Resistivity Ω-cm	0.1-50	0.1-50	0.1-50
2-6	Resistivity Uniformity	≤3%	≤5%	-
2-7	Dislocation cm-2	<10	<10	<10
2-8	Surface Quality	No chip, haze or orange peel remains, etc.
3	Handle Substrate Characteristics
3-1	Growth Method	CZ	CZ	CZ
3-2	Conductivity Type	P/N	P/N	P/N
3-3	Thickness μm	525-675	525-675	525-675
3-4	Thickness Uniformity max	3%	3%	3%
3-5	Resistivity Ω-cm	As required	As required	As required
3-6	Resistivity Uniformity	5%	5%	5%
3-7	TTV μm max	10	10	10
3-8	Bow μm max	30	30	30
3-9	Warp μm max	30	30	30
3-10	EPD cm-2 max	100	100	100
3-11	Edge Profile	Rounded	Rounded	Rounded
3-12	Surface Quality	No chip, haze or orange peel remains, etc.
3-13	Back Side Finish	Etched or LTO (5000±500Å)
4	Packing	Cassette inside, carton box outside.