Tungsten Carbide Ready to Press Powder ( RTP powder) or Tungsten Carbide Grade powder, with appearance of spherical particles gray color, is free-flowing powder as basic material in the production of sintered cemented carbide product such as solid cutting tools, drilling tools, downhole tools, wear parts and other precision carbide components.
By uses the most advanced doping paraffine production process and spray drying technology, Tungsten Carbide Ready to Press powder is shaped into spherical granule with excellent flow-ability after ball milled, fully mixed and spray dried, each granule contain the constituent of a specified grade, such as tantalum carbide TaC, titanium carbide TiC, niobium carbide NbC, tantalum-niobium carbide TaNbC and other additive as inhibitors with cobalt or nickel etc as the binder to get superior performance. With excellent spherical morphology, perfect flowability and minimal residual moisture, RTP powder is an ideal grade powder to be used as the starting material to produce Cemented Carbide parts.
Western Minetals (SC) Corporation has the experience and technical team dedicated to develop and provide RTP powder to meets your specific requirements, several series RTP or Grade Powder with different grain sizes and formulations are available including ZK (ZK10μf, ZK30μf, ZK20, ZK30), YG (YG6, YG8, YG10, YG10C, YG11…), and ZP (ZP10, ZP25, Zp35) etc, or can be delivered as customized grade.
No. | Items | Standard Specification | ||
1 | Size | 2″ | 3″ | 4″ |
2 | Diameter mm | 50.5±0.5 | 76.2±0.5 | 100±0.5 |
3 | Growth Method | LEC | LEC | LEC |
4 | Conductivity | P/(Zn-doped or un-doped), N/Te-doped | ||
5 | Orientation | (100)±0.5°, (111)±0.5° | ||
6 | Thickness μm | 500±25 | 600±25 | 800±25 |
7 | Orientation Flat mm | 16±2 | 22±1 | 32.5±1 |
8 | Identification Flat mm | 8±1 | 11±1 | 18±1 |
9 | Mobility cm2/V.s | 200-3500 or as required | ||
10 | Carrier Concentration cm-3 | (1-100)E17 or as required | ||
11 | TTV μm max | 15 | 15 | 15 |
12 | Bow μm max | 15 | 15 | 15 |
13 | Warp μm max | 20 | 20 | 20 |
14 | Dislocation Density cm-2 max | 500 | 1000 | 2000 |
15 | Surface Finish | P/E, P/P | P/E, P/P | P/E, P/P |
16 | Packing | Single wafer container sealed in Aluminum bag. |
Linear Formula | InSb |
Molecular Weight | 236.58 |
Crystal structure | Zinc blende |
Apperance | Dark grey metallic crystals |
Melting Point | 527 °C |
Boiling Point | N/A |
Density at 300K | 5.78 g/cm3 |
Energy Gap | 0.17 eV |
Intrinsic resistivity | 4E(-3) Ω-cm |
CAS Number | 1312-41-0 |
EC Number | 215-192-3 |