Discount wholesale Inas Substrate - Gallium Nitride GaN – WMC

Inquiry now

Details

Tags

Gallium Nitride GaN is suitable for the production of the cutting-edge high speed and high capacity bright light-emitting diodes LEDs components, laser and optoelectronics devices such as green and blue lasers, high electron mobility transistors (HEMTs) products and in high-power and high-temperature devices manufacturing industry.

No.	Items	Standard Specification
1	Shape	Circular	Circular	Square
2	Size	2″	4″	–
3	Diameter mm	50.8±0.5	100±0.5	–
4	Side Length mm	–	–	10×10 or 10×5
5	Growth Method	HVPE	HVPE	HVPE
6	Orientation	C-plane (0001)	C-plane (0001)	C-plane (0001)
7	Conductivity Type	N-type/Si-doped, Un-doped, Semi-insulating
8	Resistivity Ω-cm	<0.1, <0.05, >1E6
9	Thickness μm	350±25	350±25	350±25
10	TTV μm max	15	15	15
11	Bow μm max	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
14	Surface Roughness	Front: ≤0.2nm, Back: 0.5-1.5μm or ≤0.2nm
15	Packing	Single wafer container sealed in Aluminum bag.

Linear Formula	GaN
Molecular Weight	83.73
Crystal structure	Zinc blende or Wurtzite
Appearance	Translucent solid
Melting Point	2500 °C
Boiling Point	N/A
Density at 300K	6.15 g/cm³
Energy Gap	(3.2-3.29) eV at 300K
Intrinsic resistivity	>1E8 Ω-cm
CAS Number	25617-97-4
EC Number	247-129-0

Gallium Nitride GaN at Western Minmetals (SC) Corporation can be provided in size of circular wafer 2 inch ” or 4 ” (50mm, 100mm) and square wafer 10×10 or 10×5 mm. Any customized size and specification are for the perfect solution to our customers worldwide.