Epitaxial (EPI) Silicon Wafer

Description

Epitaxial Silicon Wafer or EPI Silicon Wafer, is a wafer of semiconducting crystal layer deposited onto the polished crystal surface of a silicon substrate by epitaxial growth. The epitaxial layer may be the same material as the substrate by homogeneous epitaxial growth, or a exotic layer with specific desirable quality by heterogeneous epitaxial growth, which adopts epitaxial growth technology include chemical vapor deposition CVD, liquid phase epitaxy LPE, as well as molecular beam epitaxy MBE to achieve the highest quality of low defect density and good surface roughness. Silicon Epitaxial Wafers are primarily used in the production of advanced semiconductor devices, highly integrated semiconductor elements ICs, discrete and power devices, also utilized for element of diode and transistor or substrate for IC such as bipolar type, MOS and BiCMOS devices. Furthermore, multiple layer epitaxial and thick film EPI silicon wafers are often used in microelectronics, photonics and photovoltaics application.

Delivery

Epitaxial Silicon Wafers or EPI Silicon Wafer at Western Minmetals (SC) Corporation can be offered in size of 4, 5 and 6 inch (100mm, 125mm, 150mm diameter), with orientation <100>, <111>, epilayer resistivity of <1ohm-cm or up to 150ohm-cm, and epilayer thickness of<1um or up to 150um, to satisfy the various requirements in surface finish of etched or LTO treatment, packed in cassette with carton box outside, or as customized specification to the perfect solution.

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Technical Specification

Epi Silicon Wafer

Epitaxial Silicon Wafers or EPI Silicon Wafer at Western Minmetals (SC) Corporation can be offered in size of 4, 5 and 6 inch (100mm, 125mm, 150mm diameter), with orientation <100>, <111>, epilayer resistivity of <1ohm-cm or up to 150ohm-cm, and epilayer thickness of<1um or up to 150um, to satisfy the various requirements in surface finish of etched or LTO treatment, packed in cassette with carton box outside, or as customized specification to the perfect solution.

Symbol	Si
Atomic Number	14
Atomic Weight	28.09
Element Category	Metalloid
Group, Period, Block	14, 3, P
Crystal structure	Diamond
Color	Dark gray
Melting Point	1414°C, 1687.15 K
Boiling Point	3265°C, 3538.15 K
Density at 300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
CAS Number	7440-21-3
EC Number	231-130-8

No.	Items	Standard Specification
1	General Characteristics
1-1	Size	4"	5"	6"
1-2	Diameter mm	100±0.5	125±0.5	150±0.5
1-3	Orientation	<100>, <111>	<100>, <111>	<100>, <111>
2	Epitaxial Layer Characteristics
2-1	Growth Method	CVD	CVD	CVD
2-2	Conductivity Type	P or P+, N/ or N+	P or P+, N/ or N+	P or P+, N/ or N+
2-3	Thickness μm	2.5-120	2.5-120	2.5-120
2-4	Thickness Uniformity	≤3%	≤3%	≤3%
2-5	Resistivity Ω-cm	0.1-50	0.1-50	0.1-50
2-6	Resistivity Uniformity	≤3%	≤5%	-
2-7	Dislocation cm-2	<10	<10	<10
2-8	Surface Quality	No chip, haze or orange peel remains, etc.
3	Handle Substrate Characteristics
3-1	Growth Method	CZ	CZ	CZ
3-2	Conductivity Type	P/N	P/N	P/N
3-3	Thickness μm	525-675	525-675	525-675
3-4	Thickness Uniformity max	3%	3%	3%
3-5	Resistivity Ω-cm	As required	As required	As required
3-6	Resistivity Uniformity	5%	5%	5%
3-7	TTV μm max	10	10	10
3-8	Bow μm max	30	30	30
3-9	Warp μm max	30	30	30
3-10	EPD cm-2 max	100	100	100
3-11	Edge Profile	Rounded	Rounded	Rounded
3-12	Surface Quality	No chip, haze or orange peel remains, etc.
3-13	Back Side Finish	Etched or LTO (5000±500Å)
4	Packing	Cassette inside, carton box outside.

Silicon Epitaxial Wafers are primarily used in the production of advanced semiconductor devices, highly integrated semiconductor elements ICs, discrete and power devices, also utilized for element of diode and transistor or substrate for IC such as bipolar type, MOS and BiCMOS devices. Furthermore, multiple layer epitaxial and thick film EPI silicon wafers are often used in microelectronics, photonics and photovoltaics application.