No. | Items | Standard Specification | ||
1 | Size | 2″ | 3″ | 4″ |
2 | Diameter mm | 50.8±0.5 | 76.2±0.5 | 100±0.5 |
3 | Growth Method | VGF | VGF | VGF |
4 | Conductivity | P/Zn-doped, N/(S-doped or un-doped), Semi-insulating | ||
5 | Orientation | (100)±0.5°, (111)±0.5° | ||
6 | Thickness μm | 350±25 | 600±25 | 600±25 |
7 | Orientation Flat mm | 16±2 | 22±1 | 32.5±1 |
8 | Identification Flat mm | 8±1 | 11±1 | 18±1 |
9 | Mobility cm2/V.s | 50-70, >2000, (1.5-4)E3 | ||
10 | Carrier Concentration cm-3 | (0.6-6)E18, ≤3E16 | ||
11 | TTV μm max | 10 | 10 | 10 |
12 | Bow μm max | 10 | 10 | 10 |
13 | Warp μm max | 15 | 15 | 15 |
14 | Dislocation Density cm-2 max | 500 | 1000 | 2000 |
15 | Surface Finish | P/E, P/P | P/E, P/P | P/E, P/P |
16 | Packing | Single wafer container sealed in Aluminum bag. |
Linear Formula | InP |
Molecular Weight | 145.79 |
Crystal structure | Zinc blende |
Apperance | Crystalline |
Melting Point | 1062°C |
Boiling Point | N/A |
Density at 300K | 4.81 g/cm3 |
Energy Gap | 1.344 eV |
Intrinsic resistivity | 8.6E7 Ω-cm |
CAS Number | 22398-80-7 |
EC Number | 244-959-5 |