Factory Cheap Cemented Carbide Composite Rod - Zinc Telluride ZnTe | Tellurides – WMC

Antimony Telluride Sb₂Te₃, a compound semiconductor of Group VA, VIA elements in the periodic table. With hexagonal-Rhombohedral structure, density 6.5g/cm³, melting point 620^oC, band gap 0.23eV, CAS 1327-50-0, MW 626.32, it is soluble in nitric acid and incompatible with acids, insoluble in water, and stability of non-flammable. Antimony Telluride belongs to the group-15 metalloid trichalcogenides, Sb₂Te₃ crystals have a typical lateral size, rectangular shaped and a metallic appearance, the layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Prepared by Bridgman method, Antimony Telluride is a semiconductor, topological insulator and a thermoelectric material, solar cell materials, vacuum evaporation. Meanwhile, Sb2Te3 is an important base material for high performance phase change memory or optical data storage applications. Antimony Telluride Sb₂Te₃ at Western Minmetals (SC) Corporation with 4N 99.99% and 5N 99.999% purity is available in form of powder, granule, lump, chunk, bulk crystal, rod and substrate etc or as customized specification.

Aluminum Telluride Al₂Te₃ or Triturium Dialuminium, CAS 12043-29-7, MW 436.76, density 4.5g/cm³, no odor, is gray-black hexagonal crystal, and stable at room temperature, but decomposes into hydrogen telluride and aluminum hydroxide in humid air. Aluminum Telluride Al₂Te₃,can be formed by reacting Al and Te at 1000°C, the binary system Al-Te contains the intermediate phases AlTe, Al₂Te₃ (α-phase and β-phase) and Al₂Te₅, The crystal structure of α- Al₂Te₃ is monoclinic. Aluminum Telluride Al₂Te₃ is mainly used for pharmaceutical raw material, semiconductor and infrared material. Aluminum Telluride Al₂Te₃ at Western Minmetals (SC) Corporation with 4N 99.99% and 5N 99.999% purity is available in form of powder, granule, lump, chunk, bulk crystal etc or as customized specification with vacuum package by bottle or composite bag.

Bismuth Telluride Bi₂Te₃, P type or N-type, CAS No 1304-82-1, MW 800.76, density 7.642 g/cm³, melting point 585⁰C, is synthesized by vacuum smelting- controlled crystallization process namely with the Bridgman-Stockbarber method and Zone-floating method. As thermoelectric semiconductor material, the Bismuth Telluride pseudo binary alloy presents the best characteristics for room temperature thermoelectric cooling applications for miniaturized versatile cooling devices in a wide spectrum of equipments and energy generation in space vehicles. By using appropriately oriented single crystals instead of polycrystalline, the efficiency of the thermoelectric device (Thermoelectric Cooler or Thermoelectric Generator) could be increased greatly, which can be founded in semiconductor refrigeration and temperature difference power generation filed, and also for optoelectronic devices and Bi2Te3 thin film material. Bismuth Telluride Bi₂Te₃ at Western Minmetals (SC) Corporation is in size of powder, granule, lump, rod, substrate, bulk crystal etc to be delivered with 4N 99.99% and 5N 99.999% purity.

Copper Telluride Cu₂Te, light gray-black appreance, CAS 12019-52-2, MW 254.692, density 7.27g/cm³, melting point 900°C, odorless, is a transition metal chalcogenide and 2D layered material, and stable in air at room temperature. Copper Telluride Cu₂Te crystal compound with single crystal orthorhombic structure, is successfully synthesized by using an electrochemical method and  a straightforward approach based on chemical deposition method CVD, it has fascinating physical, chemical, mechanical, electronic, photoelectric and thermal properties for various technological applications in optics, catalysis, energy storage, electronic devices and sensors, mainly used in precision semiconductor and optoelectronic materials. Copper Telluride at Western Minmetals (SC) Corporation with 99.99% 4N, 99.999% 5N purity are available in form of powder, granule, lump, chunk, bulk crystal and rod etc or as customized specification for industry and research purposes.

Indium Telluride InTe, molecular weight 242.4, density of 6.29 g/cm³, melting point is 696°C, black or blue-gray crystal, is stable in air, insoluble in hydrochloric acid and soluble in nitric acid. Heating in vacuum is easy to volatilize, and the vapor is stable and does not decompose. Indium Telluride has strong anisotropy and metal conductivity. Indium Telluride InTe, a compound semiconductor, which structure of tetragonal crystal is lamellar, prepared by chemical vapor deposition CVD process or by Bridgeman method with direct reaction of indium and tellurium. The only commercially available layered InTe crystal, which has band-gap at around 0.6 eV and display strong photoluminescence. Indium Telluride is generally n-type material, and mainly used in semiconductor industry, sensor parts, lens coating, and for making infrared detectors, or other research purpose. Indium Telluride InTe 99.99% 4N, 99.999% 5N purity at Western Minmetals (SC) Corporation are available in form of powder, lump, granule, lump, bulk crystal and rod etc for industry applications.

Arsenic Telluride or Arsenic Ditelluride As₂Te₃, a group I-III binary compound, is in two crystallographic Alpha-As₂Te₃ and Beta-As₂Te₃, among which Beta-As₂Te₃ with rhombohedral structure, exhibits interesting thermoelectric (TE) properties by adjusting the content of alloys. Polycrystalline Arsenic Telluride As₂Te₃ compound synthesized by powder metallurgy may be an interesting platform to design novel TE materials with high efficiency. Single crystals of As2Te3 is prepared hydrothermally by heating and gradually cooling a mixture of stoichiometric quantities of powdered As and Te in a HCl 25% w/w solution. It is mainly used as semiconductors, topological insulators, thermoelectric materials. Arsenic Telluride As₂Te₃ at Western Minmetals (SC) Corporation with purity of 99.99% 4N, 99.999% 5N can be delivered in form of powder, granule, lump, chunk, bulk crystal etc or as customized specification.

Gallium Telluride Ga₂Te₃  is a hard and brittle black crystal with  MW 522.24, CAS 12024-27-0, melting point of 790℃ and density 5.57g/cm³. Single crystal Gallium Telluride GaTe is developed by using different growth techniques such as Bridgman Growth, Chemical Vapor Transport CVT or Flux Zone Growth to optimize grain size, defect concentration, structural, optical, and electronic consistency. But Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals, which distinguishes itself from Chemical Vapor Transport CVT technique to ensure slow crystallization for perfect atomic structure, and impurity free crystal growth. Gallium Telluride GaTe is a layered semiconductor belonging to the III-VI metal compound crystal with two modifications, which are stable α-GaTe of a monoclinic and metastable β-GaTe of hexagonal in structure, good p-type transport properties, a direct band-gap of 1.67 eV in the bulk, the hexagonal phase converts to the monoclinic phase at high temperature. Gallium Telluride layered semiconductor possesses interesting properties attractive for future opto-electronic applications. Gallium Telluride Ga₂Te₃ at Western Minmetals (SC) Corporation with purity of 99.99% 4N, 99.999% 5N can be delivered in form of powder, granule, lump, chunk, rod, bulk crystal etc or as customized specification.

Germanium Telluride GeTe, is black crystal, CAS 12025-39-7, MW 200.24, density 6.14g/cm³, melting point 725°C, and insoluble in water. Germanium Telluride crystal is an ionic crystal and compound semiconductor, which has a direct band gap of 0.23eV wide at room temperature, and belongs to narrow energy gap semiconductor. It is stable under normal temperature and pressure, and shows semimetallic conduction and ferroelectric. There are three major crystalline forms of this product, room-temperature α (rhombohedral) and γ (orthorhombic) structures and high-temperature β (cubic, rocksalt-type) phase, α phase being most common one. Germanium Telluride, a novel 2D material, has attracted much attention due to its excellent electronic and optical properties. The preparation of Germanium Telluride is by heating Germanium and Tellurium to their melting point in a vacuum quartz tube and recrystallizing to obtain GeTe, but single crystal GeTe can be obtained by zone floating method. It is used as a material for infrared light emission and detection. Meanwhile, Germanium telluride is a well-known phase change material PCM used in non-volatile memory cells and radio frequency switches. Germanium Telluride at Western Minmetals (SC) Corporation can be delivered with 99.99% 4N, 99.999% 5N purity in form of powder, lump, chunk, bulk crystal chunk and rod etc or as customized specification.

Molybdenum Telluride or Molybdenum Ditelluride MoTe₂, CAS No 12058-20-7, formula weight 351.14, is a gray hexagonal crystal solid compound. Molybdenite MoTe₂ and Tetramolybdenite Mo₃Te₄ are stable in air and decompose in alkali, insoluble in water, soluble in nitric acid, decomposes but  not melting at high temperature in vacuum.  Molybdenum Telluride is synthesized in sealed vacuum tube at higher temperature by reacting of molybdenum and tellurium to form homogeneous compounds MoTe₂ and Mo₃Te₄.  Molybdenum Telluride is a crystal produced for solid lubricant or as a sputtering targets in semiconductor field. Molybdenum Telluride MoTe₂ at Western Minmetals (SC) Corporation with purity of 99.95% 3N5 is in shape of powder, granule, lump, chunk, bulk crystal etc or as customized specification. 

Lead Telluride PbTe, CAS 1314-91-6, MW 334.80, melting point 905°C, Insoluble in water and acid, ionic crystal, is a direct band gap semiconductor with band gap width of 0.32ev at room temperature. The materials of PbTe is prepared by Bridgeman method, chemical mechanical deposition method and sublimation recrystallization method. Lead Telluiide PbTe is a polar semiconductor crystallizing in the rocksalt-type lattice, exhibits unusual properties relative to other semiconductors which possess high dielectric constant, high mobility, and narrow fundamental gaps whose temperature coefficient is positive. Lead Telluride is of technical importance for use in a variety of infrared optoelectronic device, infrared photodetector application, and for very low threshold-current laser diodes, and can also be used as thermoelectric materials. Lead Telluride PbTe at Western Mimetals (SC) Corporation can be delivered in 99.99% 4N, 99.999% 5N purity with form of powder, granule, lump, chunk, bulk crystal and rod etc or as customized specification for industry and research purposes.

Tungsten Telluride or Tungsten Ditelluride WTe₂, metal appearance, typical acicular and rectangular shape, CAS No.12067-76-4, stable in ambient conditions, is a type-II Weyl semimetal WSM, belongs to group VI transition metal dichalcoride TMDC with physical, electronic and thermodynamic properties that make it attractive for a variety of electronic device architectures such as field effect transistors applications.  With a typical carrier concentration of about 1E20-1E21 cm^-3 at room temperature and as a new type of unsaturated linear magnetoresistive material, Tungsten Ditelluride series material obtained by hydrothermal/solvothermal method and self-fluxing method has potential applications in the fields of strong magnetic detection, information recording and magnetic storage devices. Single Crystal Tungsten Telluride is grown by highly sophisticated float zone technique to drive out defects intentionally during the growth process to achieve defect free and environmentally stable WTe₂ crystals. Tungsten Telluride WTe₂ at Western Minmetals (SC) Corporation with purity of 99.95% 3N5 is in size of powder, granule, lump, chunk, rod, disc, bulk crystal and single crystal etc or as customized specification.

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