No. | Items | Standard Specification | |||
1 | Size | 2″ | 3″ | 4″ | 6″ |
2 | Diameter mm | 50.8 0.38 | 76.2 0.38 | 100 0.5 | 150 0.5 |
3 | Growth Method | MOCVD | MOCVD | MOCVD | MOCVD |
4 | Conductivity Type | 4H-N, 6H-N, 4H-SI, 6H-SI | |||
5 | Resistivity Ω-cm | 0.015-0.028; 0.02-0.1; >1E5 | |||
6 | Orientation | 0°±0.5°; 4.0° towards <1120> | |||
7 | Thickness μm | 330±25 | 330±25 | (350-500)±25 | (350-500)±25 |
8 | Primary Flat Location | <1-100>±5° | <1-100>±5° | <1-100>±5° | <1-100>±5° |
9 | Primary Flat Length mm | 16±1.7 | 22.2±3.2 | 32.5±2 | 47.5±2.5 |
10 | Secondary Flat Location | Silicon face up: 90°, clockwise from prime flat ±5.0° | |||
11 | Secondary Flat Length mm | 8±1.7 | 11.2±1.5 | 18±2 | 22±2.5 |
12 | TTV μm max | 15 | 15 | 15 | 15 |
13 | Bow μm max | 40 | 40 | 40 | 40 |
14 | Warp μm max | 60 | 60 | 60 | 60 |
15 | Edge Exclusion mm max | 1 | 2 | 3 | 3 |
16 | Micropipe Density cm-2 | <5, industrial; <15, lab; <50, dummy | |||
17 | Dislocation cm-2 | <3000, industrial; <20000, lab; <500000, dummy | |||
18 | Surface Roughness nm max | 1(Polished), 0.5 (CMP) | |||
19 | Cracks | None, for industrial grade | |||
20 | Hexagonal Plates | None, for industrial grade | |||
21 | Scratches | ≤3mm, total length less than substrate diameter | |||
22 | Edge Chips | None, for industrial grade | |||
23 | Packing | Single wafer container sealed in Aluminum bag. |
Linear Formula | SiC |
Molecular Weight | 40.1 |
Crystal structure | Wurtzite |
Apperance | Solid |
Melting Point | 3103±40K |
Boiling Point | N/A |
Density at 300K | 3.21 g/cm3 |
Energy Gap | (3.00-3.23) eV |
Intrinsic resistivity | >1E5 Ω-cm |
CAS Number | 409-21-2 |
EC Number | 206-991-8 |