factory low price Indium Arsenide Substrates - Single Crystal Silicon Ingot – WMC

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No.	Items	Standard Specification
1	Size	2″, 3″, 4″, 5″, 6″, 8″, 9.5″, 10″, 12″
2	Diameter mm	50.8-241.3, or as required
3	Growth Method	CZ, MCZ, FZ, FZ-NTD
4	Conductivity Type	P-type/B doped, N-type/P-doped or Un-doped
5	Length mm	≥180 or as required
6	Orientation	<100>, <110>, <111>
7	Resistivity Ω-cm	As required
8	Carbon Content a/cm3	≤5E16 or as required
9	Oxygen Content a/cm3	≤1E18 or as required
10	Metal Contamination a/cm3	<5E10 (Cu, Cr, Fe, Ni) or <3E10 (Al, Ca, Na, K, Zn)
11	Packing	Plastic bag inside, carton box outside.

Symbol	Si
Atomic Number	14
Atomic Weight	28.09
Element Category	Metalloid
Group, Period, Block	14, 3, P
Crystal structure	Diamond
Color	Dark gray
Melting Point	1414°C, 2577.2°F, 1687.15 K
Boiling Point	3265°C, 5909°F, 3538.15 K
Density at 300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
CAS Number	7440-21-3
EC Number	231-130-8

Single Crystal Silicon Ingot, when completely grown and qualified its resistivity, impurity content, crystal perfection, size and weight, is grounded using diamond wheels to make it a perfect cylinder to the right diameter, then undergoes an etching process to remove the mechanical defects left by the grinding process. Afterwards the cylindrical ingot is cut into blocks with certain length, and is given notch and primary or secondary flat by automated wafer handling systems for alignment to identify the crystallographic orientation and conductivity before downstream wafer slicing process.