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Factory Price Non-Volatile Memory Device - CZ Silicon Wafer – WMC


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No. Items Standard Specification
1 Size 2″ 3″ 4″ 6″ 8″ 12″
2 Diameter mm 50.8±0.3 76.2±0.3 100±0.5 150±0.5 200±0.5 300±0.5
3 Conductivity P or N or un-doped
4 Orientation <100>,   <110>,   <111>
5 Thickness μm 279, 381, 425, 525, 575, 625, 675, 725 or as required
6 Resistivity Ω-cm ≤0.005, 0.005-1, 1-10, 10-20, 20-100, 100-300 etc
7 RRV max 8%, 10%, 12%
8 Primary Flat/Length mm As SEMI standard or as required
9 Secondary Flat/Length mm As SEMI standard or as required
10 TTV μm max 10 10 10 10 10 10
11 Bow & Warp μm max 30 30 30 30 30 30
12 Surface Finish As-cut, L/L, P/E, P/P 
13 Packing Foam box or cassette inside, carton box outside.
Symbol Si
Atomic Number 14
Atomic Weight 28.09
Element Category Metalloid
Group, Period, Block 14, 3, P
Crystal structure Diamond
Color Dark gray
Melting Point 1414°C, 1687.15 K
Boiling Point 3265°C, 3538.15 K
Density at 300K 2.329 g/cm3
Intrinsic resistivity 3.2E5 Ω-cm
CAS Number 7440-21-3
EC Number 231-130-8
  • Sample Available Upon Request 
  • Safety Delivery of Goods By Courier/Air/Sea
  • COA/COC Quality Management
  • Secure & Convenient Packing
  • UN Standard Packing Available Upon Request
  • ISO9001:2015 Certified    
  • CPT/CIP/FOB/CFR Terms By Incoterms 2010
  • Flexible Payment Terms T/T D/P L/C Acceptable
  • Full Dimensional After-Sale Services
  • Quality Inspection By Sate-of-the-art Facility
  • Rohs/REACH Regulations Approval
  • Non-Disclosure Agreements NDA
  • Non-Conflict Mineral Policy
  • Regular Environmental Management Review
  • Social Responsibility Fulfillment
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