| No. |
Items |
Standard Specification |
| 1 |
General Characteristics |
| 1-1 |
Size |
4″ |
5″ |
6″ |
| 1-2 |
Diameter mm |
100±0.5 |
125±0.5 |
150±0.5 |
| 1-3 |
Orientation |
<100>, <111> |
<100>, <111> |
<100>, <111> |
| 2 |
Epitaxial Layer Characteristics |
| 2-1 |
Growth Method |
CVD |
CVD |
CVD |
| 2-2 |
Conductivity Type |
P or P+, N/ or N+ |
P or P+, N/ or N+ |
P or P+, N/ or N+ |
| 2-3 |
Thickness μm |
2.5-120 |
2.5-120 |
2.5-120 |
| 2-4 |
Thickness Uniformity |
≤3% |
≤3% |
≤3% |
| 2-5 |
Resistivity Ω-cm |
0.1-50 |
0.1-50 |
0.1-50 |
| 2-6 |
Resistivity Uniformity |
≤3% |
≤5% |
- |
| 2-7 |
Dislocation cm-2 |
<10 |
<10 |
<10 |
| 2-8 |
Surface Quality |
No chip, haze or orange peel remains, etc. |
| 3 |
Handle Substrate Characteristics |
| 3-1 |
Growth Method |
CZ |
CZ |
CZ |
| 3-2 |
Conductivity Type |
P/N |
P/N |
P/N |
| 3-3 |
Thickness μm |
525-675 |
525-675 |
525-675 |
| 3-4 |
Thickness Uniformity max |
3% |
3% |
3% |
| 3-5 |
Resistivity Ω-cm |
As required |
As required |
As required |
| 3-6 |
Resistivity Uniformity |
5% |
5% |
5% |
| 3-7 |
TTV μm max |
10 |
10 |
10 |
| 3-8 |
Bow μm max |
30 |
30 |
30 |
| 3-9 |
Warp μm max |
30 |
30 |
30 |
| 3-10 |
EPD cm-2 max |
100 |
100 |
100 |
| 3-11 |
Edge Profile |
Rounded |
Rounded |
Rounded |
| 3-12 |
Surface Quality |
No chip, haze or orange peel remains, etc. |
| 3-13 |
Back Side Finish |
Etched or LTO (5000±500Å) |
| 4 |
Packing |
Cassette inside, carton box outside. |
