No. |
Item |
Standard Specification |
||
Formula |
Purity |
Impurity PPM Max each |
||
1 |
Zinc Telluride |
ZnTe |
5N |
Mg/Cu/Ni/In 0.5, As/Al 0.5, Co 0.1, Cd/Pb/Sn 1.0, Ag 0.2 |
2 |
Arsenic Telluride |
As2Te3 |
4N 5N |
Available Upon Request. Special specification can be customized |
3 |
Antimony Telluride |
Sb2Te3 |
4N 5N |
|
4 |
Aluminum Telluride |
Al2Te3 |
4N 5N |
|
5 |
Bismuth Telluride |
Bi2Te3 |
4N 5N |
|
6 |
Copper Telluride |
Cu2Te |
4N 5N |
|
7 |
Cadmium Telluride |
CdTe |
5N 6N 7N |
|
8 |
Cadmium Zinc Telluride |
CdZnTe |
5N 6N 7N |
|
9 |
Cadmium Manganese Telluride |
CdMnTe |
5N 6N |
|
10 |
Gallium Telluride |
Ga2Te3 |
4N 5N |
|
11 |
Indium Telluride |
InTe |
4N 5N |
|
12 |
Lead Telluride |
PbTe |
5N |
|
13 |
Molybdenum Telluride |
MoTe2 |
3N5 |
|
14 |
Tungsten Telluride |
WTe2 |
3N5 |
|
15 |
Size |
-60/-80mesh, 1-20mm Lump, 1-6mm Granule, Target/ Blank |
||
16 |
Packing |
In polyethylene bottle or composite bag, 1kg each. |
Tungsten Telluride or Tungsten Ditelluride WTe2, metal appearance, typical acicular and rectangular shape, CAS No.12067-76-4, stable in ambient conditions, is a type-II Weyl semimetal WSM, belongs to group VI transition metal dichalcoride TMDC with physical, electronic and thermodynamic properties that make it attractive for a variety of electronic device architectures such as field effect transistors applications. With a typical carrier concentration of about 1E20-1E21 cm-3 at room temperature and as a new type of unsaturated linear magnetoresistive material, Tungsten Ditelluride series material obtained by hydrothermal/solvothermal method and self-fluxing method has potential applications in the fields of strong magnetic detection, information recording and magnetic storage devices. Single Crystal Tungsten Telluride is grown by highly sophisticated float zone technique to drive out defects intentionally during the growth process to achieve defect free and environmentally stable WTe2 crystals. Tungsten Telluride WTe2 at Western Minmetals (SC) Corporation with purity of 99.95% 3N5 is in size of powder, granule, lump, chunk, rod, disc, bulk crystal and single crystal etc or as customized specification.
Cadmium Telluride CdTe, cubic zincblende crystal, is II-VI crystalline compound semiconductor synthesized from cadmium and tellurium with purity of 99.999%, 99.9999% and 99.99999% (5N 6N 7N), it can be crystallized from the Te-rich Cd-Te solution by Traveling Heater Method (THM). Being high resistivity at room temperature and large linear attenuation coefficient, CdTe became to be considered a prospective material for the room temperature semiconductor detector, it is primarily employed for several applications such as an infrared optical window and lens, thin film solar cell material, PIN semiconductor structure manufacturing, Infrared imaging, X-ray and gamma ray detection, optical devices, and photovotaic, epitaxial substrate; evaporation source of crystal sheet, electro-optic modulators designing or target materials epitaxial processing and other related fields. Besides, CdTe crystals can be used for spectral analysis and far infrared transmission and can be alloyed with mercury to make a versatile HgCdTe MCT infrared detector material, and alloyed with zinc to make CdZnTe solid x-ray and gamma ray detector. Cadmium Telluride CdTe polycrystalline at Western Minmetals (SC) Corporation with 99.999% 99.9999%, 99.99999% 5N 6N 7N purity is in size of powder, lump, chunk, and bar or customized specification can be delivered, which is packed in composite aluminum bag with argon gas filled protection, carton box outside, and Cadmium Telluride CdTe single crystal at Western Minmetals (SC) Corporation delivered with 99.999% 99.9999%, 99.99999% 5N 6N 7N purity is in form of bar and blank 5x5x0.5mm, 10x10x0.5m, and Disc with 1.0 inch in diameter x 0.5mm or customized specification.
Cadmium Zinc Telluride CdZnTe, (CZT, Cd1−xZnxTe) crystal is a compound of cadmium, zinc and tellurium 99.9999% or 99.99999% 6N 7N purity, shows peculiar properties in the structural properties, charge transport, contacting issues and spectrometer performance. Cadmium Zinc Telluride consists several complicated procedures of polycrystal synthesis, crystal growth for CdZnTe, post-growth treatment and substrate fabrication improvements etc, Raw material synthesis by using the technologies of gradient temperature and directional solidification, and the crystal growth technologies including High Pressure Vertical Bridgman (HPVB), Low Pressure (LPB) Vertical modified Bridgman (VB), Horizontal modified Bridgman (HB), Physical Vapor Deposition (PVD) methods, Traveling Heater Method (THM) can be employed for its promising outcomes to dissolves a polycrystalline material to produce a single-crystal , and afterwards surface treatment to remove defects and damages caused during cutting and polishing in the fabrication by chemical treatments to producing a more chemically stable surface. Cadmium Zinc Telluride single crystal is a kind of promising photorefractive material at near-infrared wavelengths, and a wide band gap of approx 1.4-2.2 eV semiconductor for room-temperature gamma-ray spectroscopy and medical imaging. In general, It is employed for several applications such as Infrared imaging, X-ray and gamma-ray detection, optical devices, photovoltaics, solar cells, photorefractive grating, electro-optic modulator, terahertz generation, it can also be used as a substrate material for the epitaxial growth of infrared detector material-Mercury Cadmium Telluride HgCdTe. Cadmium Zinc Telluride CZT or CdZnTe at Western Minetals (SC) Corporation can be delivered in polycrystalline state in size of granule, lump, chunk and bar or customized specification with vacuum composite aluminum bag, and in single crystal state in size of square blank 10x10mm, 14x14mm, 25x25mm or customized specification with single piece package
Cadmium Manganese Telluride CdMnTe or CMT, 99.999% 5N purity, (Cd0.8-0.9Mn0.1-0.2Te, Cd0.63Mn0.37Te or other atomic ratio Cd1-xMnxTe), is a synthesized compound of cadmium, manganese and tellurium, and crystallized into a hexagonal structure. Cadmium Manganese Telluride CdMnTe (Cd1-xMnxTe) is a promising material for Room-Temperature X-ray and gamma-ray detection applications. With a wide-band-gap ranging from 1.7-2.2 eV semiconductor crystal grown by the modified floating-zone method (FZM), or Travelling Heater Method (THM) or the Vertical Bridgman (VB) methods, it attains high-resistivity, large-volume single crystal and high mobility-lifetime crystal, which characterizes different Mn axial distribution, impurity concentrations, resistivity, defects-free, Hall effects and energy response spectra . The conductivity of the THM grown crystal is weak N-type and the VB is P-type. A single Cadmium-Manganese-Telluride crystal also exhibits both the Pockels and larger Faraday effects as an efficient material for optical isolator at longer wavelengths, it is a diluted magnetic semiconductor material which forms the basis for many important devices such as IR detectors, solar cells, magnetic field sensor, visible and near IR lasers, and used for photovoltaic film cell, electro-optic modulator, and other optical photovolticve material. In general, it offers several potential advantages over CdZnTe and values as an alternative detector material to the well-known CdZnTe detectors. Cadmium Manganese Telluride CMT CdMnTe at Western Minetals (SC) Corporation with 99.999% 5N purity can be delivered in size of powder, granule, lump, chunk, disc and bar or customized specification with vacuum composite aluminum bag package.