wmk_product_02

Free sample for Homoepitaxy - Sapphire Al2O3 Wafer & Ingot – WMC


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No. Items Standard Specification
1 Diameter mm 50.8±0.05 100±0.1 150±0.2
2 Growth Method HEM HEM HEM
3 Orientation (C-A) or (C-M) (C-A) or (C-M) (C-A) or (C-M)
4 Primary Flat Location A-axis ±0.2° A-axis ±0.2° A-axis ±0.2°
5 Primary Flat Length mm 16±0.5 30±0.5 47.5±0.5
6 Thickness μm 430±10 650±20 1300±20
7 TTV μm max 5 10 15
8 Bow μm max 5 10 15
9 Warp μm max 8 15 30
10 Surface Finish P/E P/E P/E
11 Surface Roughness nm <0.2 (epi-ready, for polished surface)
12 Packing In Nitrogen filled atmosphere vacuum bag.
14 Remarks Ingot/bulk up to 8″ is also available upon request.

 

Linear Formula Al2O3
Molecular Weight 101.96
Crystal structure Hexagonal
Apperance Translucent solid
Melting Point 2050 °C, 3720 °F
Boiling Point 2977 °C, 5391 °F
Density at 300K 4.0 g/cm3
Energy Gap N/A
Intrinsic resistivity 1E16 Ω-cm
CAS Number 1344-28-1
EC Number N/A
  • Sample Available Upon Request
  • Safety Delivery of Goods By Courier/Air/Sea
  • COA/COC Quality Management
  • Secure & Convenient Packing
  • UN Standard Packing Available Upon Request
  • Quality Inspection Including XRD/SEM/ICP/GDMS etc
  • Full Scope of Trade Terms CPT/FOB/ CFR/CIP By Incoterms 2010
  • Flexible Payment Terms T/T D/P L/C Acceptable
  • Full Dimensional After-Sale Services
  • ISO9001:2015 Certified & Rohs/REACH Regulations Approval
  • Non-Disclosure Agreements
  • Non-Conflict Mineral Policy
  • Regular Environmental Management Review
  • Social Responsibility Fulfillment
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