Gallium Antimonide GaSb

Description

Gallium Antimonide GaSb, a semiconductor of the group III–V compounds with zinc-blende lattice structure, is synthesized by 6N 7N high purity gallium and antimony elements, and grown to crystal by LEC method from directionally frozen polycrystalline ingot or VGF method with EPD<1000cm ^-3. GaSb wafer can be sliced into and fabricated afterward from single crystalline ingot with a high uniformity of electrical parameters, unique and constant lattice structures, and low defect density, highest refractive index than the most other non-metallic compounds. GaSb can be processed with a wide choice in exact or off orientation, low or high doped concentration, good surface finish and for MBE or MOCVD epitaxial growth. Gallium Antimonide substrate is being utilized in the most cutting-edge photo-optic and optoelectronic applications such as the fabrications of photo detectors, infrared detectors with long life, high sensitivity and reliability, photoresist component, infrared LEDs and lasers, transistors, thermal photovoltaic cell and thermo-photovoltaic systems.

Delivery

Gallium Antimonide GaSb at Western Minmetals (SC) Corporation can be offered with n-type, p-type and undoped semi-insulating conductivity in size of 2” 3” and 4” (50mm, 75mm, 100mm) diameter, orientation <111> or <100>, and with wafer surface finish of as-cut, etched, polished or high quality epitaxy ready finishes. All slices are individually laser scribed for identity. Meanwhile, polycrystalline gallium antimonide GaSb lump is also customized upon request to the perfect solution.

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Technical Specification

Gallium Antimonide

GaSb

Gallium Antimonide GaSb substrate is being utilized in the most cutting-edge photo-optic and optoelectronic applications such as the fabrications of photo detectors, infrared detectors with long life, high sensitivity and reliability, photoresist component, infrared LEDs and lasers, transistors, thermal photovoltaic cell and thermo-photovoltaic systems.

	Items	Standard Specification
1	Size	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Growth Method	LEC	LEC	LEC
4	Conductivity	P-type/Zn-doped, Un-doped, N-type/Te-doped
5	Orientation	(100)±0.5°, (111)±0.5°
6	Thickness μm	500±25	600±25	800±25
7	Orientation Flat mm	16±2	22±1	32.5±1
8	Identification Flat mm	8±1	11±1	18±1
9	Mobility cm2/V.s	200-3500 or as required
10	Carrier Concentration cm-3	(1-100)E17 or as required
11	TTV μm max	15	15	15
12	Bow μm max	15	15	15
13	Warp μm max	20	20	20
14	Dislocation Density cm-2 max	500	1000	2000
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Packing	Single wafer container sealed in Aluminum bag.

Linear Formula	GaSb
Molecular Weight	191.48
Crystal structure	Zinc blende
Appearance	Gray crystalline solid
Melting Point	710°C
Boiling Point	N/A
Density at 300K	5.61 g/cm³
Energy Gap	0.726 eV
Intrinsic resistivity	1E3 Ω-cm
CAS Number	12064-03-8
EC Number	235-058-8

Gallium Antimonide GaSb at Western Minmetals (SC) Corporation can be offered with n-type, p-type and undoped semi-insulating conductivity in size of 2” 3” and 4” (50mm, 75mm, 100mm) diameter, orientation <111> or <100>, and with wafer surface finish of as-cut, etched, polished or high quality epitaxy ready finishes. All slices are individually laser scribed for identity. Meanwhile, polycrystalline gallium antimonide GaSb lump is also customized upon request to the perfect solution.