Gallium Phosphide GaP

Description

Gallium Phosphide GaP, an important semiconductor of unique electrical properties as other III-V compound materials, crystallizes in the thermodynamically stable cubic ZB structure, is an orange-yellow semitransparent crystal material with an indirect band gap of 2.26 eV (300K), which is synthesized from 6N 7N high purity gallium and phosphorus, and grown into single crystal by Liquid Encapsulated Czochralski (LEC) technique. Gallium Phosphide crystal is doped sulfur or tellurium to obtain n-type semiconductor, and zinc doped as p-type conductivity for further fabricating into desired wafer, which has applications in optical system, electronic and other optoelectronics devices. Single Crystal GaP wafer can be prepared Epi-Ready for your LPE, MOCVD and MBE epitaxial application. High quality single crystal Gallium phosphide GaP wafer p-type, n-type or undoped conductivity at Western Minmetals (SC) Corporation can be offered in size of 2″and 3” (50mm, 75mm diameter) , orientation <100>,<111> with surface finish of as-cut, polished or epi-ready process.

Applications

With low current and high efficiency in light emitting, Gallium phosphide GaP wafer is suitable for optical display systems as low-cost red, orange, and green light-emitting diodes (LEDs) and backlight of yellow and green LCD etc and LED chips manufacturing with low to medium brightness, GaP is also adopted widely as the basic substrate for the infrared sensors and monitoring cameras manufacturing.

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Technical Specification

Gallium Phosphide GaP

High quality single crystal Gallium Phosphide GaP wafer or substrate p-type, n-type or undoped conductivity at Western Minmetals (SC) Corporation can be offered in size of 2″ and 3” (50mm, 75mm) in diameter, orientation <100>, <111> with surface finish of as-cut, lapped, etched, polished, epi-ready processed in single wafer container sealed in aluminum composite bag or as customized specification to the perfect solution.

No.	Items	Standard Specification
1	GaP Size	2"
2	Diameter mm	50.8 ± 0.5
3	Growth Method	LEC
4	Conductivity Type	P-type/Zn-doped, N-type/(S, Si,Te)-doped, Un-doped
5	Orientation	<1 1 1> ± 0.5°
6	Thickness μm	(300-400) ± 20
7	Resistivity Ω-cm	0.003-0.3
8	Orientation Flat (OF) mm	16±1
9	Identification Flat (IF) mm	8±1
10	Hall Mobility cm2/V.s min	100
11	Carrier Concentration cm^-3	(2-20) E17
12	Dislocation Density cm^-2 max	2.00E+05
13	Surface Finish	P/E, P/P
14	Packing	Single wafer container sealed in aluminum composite bag, carton box outside

Linear Formula	GaP
Molecular Weight	100.7
Crystal structure	Zinc blende
Apperance	Orange solid
Melting Point	N/A
Boiling Point	N/A
Density at 300K	4.14 g/cm³
Energy Gap	2.26 eV
Intrinsic resistivity	N/A
CAS Number	12063-98-8
EC Number	235-057-2

Gallium Phosphide GaP Wafer, with low current and high efficiency in light emitting, is suitable for optical display systems as low-cost red, orange, and green light-emitting diodes (LEDs) and backlight of yellow and green LCD etc and LED chips manufacturing with low to medium brightness, GaP is also adopted widely as the basic substrate for the infrared sensors and monitoring cameras manufacturing.