Indium Antimonide InSb

Description

Indium Antimonide InSb, a semiconductor of the group III–V crystalline compounds with zinc-blende lattice structure, is synthesized by 6N 7N high purity Indium and antimony elements, and grown single crystal by VGF method or Liquid Encapsulated Czochralski LEC method from multiple zone refined polycrystalline ingot, which can be sliced and fabricated into wafer and block afterward. InSb is a direct transition semiconductor with a narrow band gap of 0.17eV at room temperature, high sensitivity to 1–5μm wavelength and ultra high hall mobility. Indium Antimonide InSb n-type, p-type and semi-insulating conductivity at Western Minmetals (SC) Corporation can be offered in size of 1″ 2″ 3″ and 4” (30mm, 50mm, 75mm, 100mm) diameter, orientation <111> or <100>, and with wafer surface finish of as-cut, lapped, etched and polished. Indium Antimonide InSb target of Dia.50-80mm with un-doped n-type is also available. Meanwhile, polycrystalline indium antimonide InSb ( multicrystal InSb) with size of irregular lump, or blank (15-40) x (40-80)mm, and round bar of D30-80mm are also customized upon request to the perfect solution.

Application

Indium Antimonide InSb is one ideal substrate for the production of many state-of-art components and devices, such as advanced thermal imaging solution, FLIR system, hall element and magnetoresistance effect element, infrared homing missile guidance system, highly-responsive Infrared photodetector sensor, high-precision magnetic and rotary resistivity sensor, focal planar arrays, and also adapted as a terahertz radiation source and in infrared astronomical space telescope etc.

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Technical Specification

Indium Antimonide

InSb

Indium Antimonide Substrate (InSb Substrate, InSb Wafer) n-type or p-type at Western Minmetals (SC) Corporation can be offered in size of 1" 2" 3" and 4” (30, 50, 75 and 100mm) diameter, orientation <111> or <100>, and with wafer surface of lapped, etched, polished finishes. Indium Antimonide Single Crystal bar (InSb Monocrystal bar) can also be supplied upon request.

Indium Antimonide Polycrystalline (InSb Polycrystalline, or multicrystal InSb) with size of irregular lump, or blank (15-40)x(40-80)mm are also customized upon request to the perfect solution.

Meanwhile, Indium Antimonide Target (InSb Target) of Dia.50-80mm with un-doped n-type is also available.

No.	Items	Standard Specification
1	Indium Antimonide Substrate	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Growth Method	LEC	LEC	LEC
4	Conductivity	P-type/Zn,Ge doped, N-type/Te-doped, Un-doped
5	Orientation	(100)±0.5°, (111)±0.5°
6	Thickness μm	500±25	600±25	800±25
7	Orientation Flat mm	16±2	22±1	32.5±1
8	Identification Flat mm	8±1	11±1	18±1
9	Mobility cm2/V.s	1-7E5 N/un-doped， 3E5-2E4 N/Te-doped, 8-0.6E3 or ≤8E13 P/Ge-doped
10	Carrier Concentration cm-3	6E13-3E14 N/un-doped, 3E14-2E18 N/Te-doped, 1E14-9E17 or <1E14 P/Ge-doped
11	TTV μm max	15	15	15
12	Bow μm max	15	15	15
13	Warp μm max	20	20	20
14	Dislocation Density cm-2 max	50	50	50
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Packing	Single wafer container sealed in Aluminum bag.

No.	Items	Standard Specification
No.	Items	Indium Antimonide Polycrystalline	Indium Antimonide Target
1	Conductivity	Undoped	Undoped
2	Carrier Concentration cm^-3	6E13-3E14	1.9-2.1E16
3	Mobility cm²/V.s	5-7E5	6.9-7.9E4
4	Size	15-40x40-80 mm	D(50-80) mm
5	Packing	In composite aluminum bag, carton box outside

Linear Formula	InSb
Molecular Weight	236.58
Crystal structure	Zinc blende
Appearance	Dark grey metallic crystals
Melting Point	527 °C
Boiling Point	N/A
Density at 300K	5.78 g/cm³
Energy Gap	0.17 eV
Intrinsic resistivity	4E(-3) Ω-cm
CAS Number	1312-41-0
EC Number	215-192-3

Indium Antimonide InSb wafer is one ideal substrate for the production of many state-of-art components and devices, such as advanced thermal imaging solution, FLIR system, hall element and magnetoresistance effect element, infrared homing missile guidance system, highly-responsive Infrared photodetector sensor, high-precision magnetic and rotary resistivity sensor, focal planar arrays, and also adapted as a terahertz radiation source and in infrared astronomical space telescope etc.