Sapphire Crystal, with its structural strength of the second hardest crystal next to diamonds, is widely used in the fabrication of single crystal substrate, superconducting film substrate material, blue, purple and white light emitting diodes LEDs, high-temperature infrared window, and a blue laser LD Industrial preferred substrate. Single Crystal Sapphire or single crystal aluminum oxide Al2O3 is useful in a transmission range from 0.2-5.5 μm as well as in other advanced power semiconductors manufacturing industries.
| No. | Items | Standard Specification | ||
| 1 | Diameter mm | 50.8±0.05 | 100±0.1 | 150±0.2 |
| 2 | Growth Method | HEM | HEM | HEM |
| 3 | Orientation | (C-A) or (C-M) | (C-A) or (C-M) | (C-A) or (C-M) |
| 4 | Primary Flat Location | A-axis ±0.2° | A-axis ±0.2° | A-axis ±0.2° |
| 5 | Primary Flat Length mm | 16±0.5 | 30±0.5 | 47.5±0.5 |
| 6 | Thickness μm | 430±10 | 650±20 | 1300±20 |
| 7 | TTV μm max | 5 | 10 | 15 |
| 8 | Bow μm max | 5 | 10 | 15 |
| 9 | Warp μm max | 8 | 15 | 30 |
| 10 | Surface Finish | P/E | P/E | P/E |
| 11 | Surface Roughness nm | <0.2 (epi-ready, for polished surface) | ||
| 12 | Packing | In vacuum bag filled with nitrogen atmosphere | ||
| 13 | Remarks | Ingot and bulk up to 8″ is available upon request. | ||
| Linear Formula | Al2O3 |
| Molecular Weight | 101.96 |
| Crystal structure | Hexagonal |
| Appearance | Translucent solid |
| Melting Point | 2050 °C, 3720 °F |
| Boiling Point | 2977 °C, 5391 °F |
| Density at 300K | 4.0 g/cm3 |
| Energy Gap | N/A |
| Intrinsic resistivity | 1E16 Ω-cm |
| CAS Number | 1344-28-1 |
| EC Number | N/A |
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