New Arrival China Metal Semiconductor Field Effect Transistor - Single Crystal Silicon Ingot – WMC
| No. | Items | Standard Specification | |
| 1 | Size | 2″ 3″ 4″ 5″ 6″ 8″ 9.5″ | |
| 2 | Diameter mm | 50.8-241.3, or as required | |
| 3 | Growth Method | CZ or FZ or FZNTD | |
| 4 | Conductivity Type | P/Boron, N/Phosphorus or un-doped | |
| 5 | Length mm | ≥180 or as required | |
| 6 | Orientation | (100), (110), (111) | |
| 7 | Resistivity Ω-cm | As required | |
| 8 | Carbon Content a/cm3 | ≤5E16 or as required | |
| 9 | Oxygen Content a/cm3 | ≤1E18 or as required | |
| 10 | Metal Contamination a/cm3 | <5E10 (Cu, Cr, Fe, Ni); <3E10 (Al, Ca, Na, K, Zn) |
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| 11 | Packing | Plastic bag inside, carton box outside. | |
| Symbol | Si |
| Atomic Number | 14 |
| Atomic Weight | 28.09 |
| Element Category | Metalloid |
| Group, Period, Block | 14, 3, P |
| Crystal structure | Diamond |
| Color | Dark gray |
| Melting Point | 1414°C, 2577.2°F, 1687.15 K |
| Boiling Point | 3265°C, 5909°F, 3538.15 K |
| Density at 300K | 2.329 g/cm3 |
| Intrinsic resistivity | 3.2E5 Ω-cm |
| CAS Number | 7440-21-3 |
| EC Number | 231-130-8 |
- Sample Available Upon Request
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