Newly Arrival Gaas Powder 6n - Cadmium Arsenide CdAs | Arsenides – WMC

Cadmium Arsenide CdAs, 99.99% 4N 99.999% 5N, dark grey color, with density 6.211g/ml, melting point 721°C, molecule 487.04 and CAS12006-15-4, soluble in nitric acid HNO₃ and stability in air,is a synthesized compound material of high purity cadmium and arsenic. Cadmium arsenide Cd₃As₂ is an inorganic semimetal in the II-V family and exhibits the Nernst effect. Cadmium Arsenide is a crystalline solid used as a semiconductor and in photo optic applications. Cadmium arsenide Cd₃As₂ crystal grown by Bridgmann growth method, non-layered bulk Dirac semimetal structure, is a degenerate n-type II-V semiconductor or a Narrow-gap semiconductor with high carrier mobility, low-effective mass, and a highly non-parabolic conduction band. Cadmium Arsenide Cd₃As₂ is a crystalline solid and finds more and more application in a semiconductor and in photo optic field such as in infrared detectors using the Nernst effect, in thin-film dynamic pressure sensors, laser, light-emitting diodes LED, quantum dots, to make magnetoresistors and in photodetectors. Cadmium Arsenide Cd₃As₂ at Western Minmetals (SC) Corporation with 99.99% 4N, 99.999% 5N purity can be delivered in form of polycrystalline powder, granule, lump, chunk, blank and single crystal etc or as customized specification.

Gallium Arsenide GaAs, a III–V compound direct-gap semiconductor material with a zinc blende crystal structure, is synthesized by high purity gallium and arsenic elements, and can be sliced and fabricated into wafer and blank from single crystalline ingot grown by Vertical Gradient Freeze (VGF) method. Thanks to its saturating hall mobility and high power & temperature stability, those RF components, microwave ICs & LED devices made by it all achieve great performance in their high frequency communication scenes. Meanwhile, its UV light transmission efficiency also allows it to be a proven basic material in Photovoltaic industry. Gallium Arsenide GaAs wafer at Western Minmetals (SC) Corporation can be delivered up to 6″ or 150mm in diameter with 6N 7N purity, and Gallium Arsenide mechanical grade substrate are also available. Meanwhile, Gallium Arsenide polycrystalline bar, lump and granule etc with purity of 99.999% 5N, 99.9999% 6N, 99.99999% 7N provided from Western Minmetals (SC) Corporation are also available or as customized specification upon request. 

Indium Arsenide InAs, a direct-band-gap semiconductor crystallizing in the zinc-blende structure, compound by high purity indium and arsenic elements, grown by Liquid Encapsulated Czochralski (LEC) method, can be sliced into and fabricated into wafer from single crystalline ingot. Due to the low dislocation density but constant lattice, InAs is an ideal substrate to further support the heterogeneous InAsSb, InAsPSb & InNAsSb structures, or AlGaSb superlattice structure. Therefore, it plays an important role in 2-14 μm wave range infrared emitting devices fabrication. Besides, the supreme hall mobility but narrow energy bandgap of InAs also allows it to become the great substrate for hall components or other laser & radiation devices manufacturing. Indium Arsenide InAs at Western Minmetals (SC) Corporation with purity of 99.99% 4N, 99.999% 5N, 99.9999% 6N can be delivered in substrate of 2″ 3″ 4″ in diameter. Meanwhile, Indium Arsenide polycrystalline lump at Western Minmetals (SC) Corporation is also available or as customized specification upon request.

Niobium Arsenide Nb₅As₃ or NbAs, off-white or grey crystalline solid, CAS No.12255-08-2, formula weight 653.327 Nb₅As₃ and 167.828 NbAs, is a binary compound of Niobium and Arsenic with the composition NbAs,Nb5As3, NbAs4 …etc synthesized by CVD method, these solid salts have very high lattice energies and are toxic due to the inherent toxicity of arsenic. High temperature thermal analysis shows NdAs exhibited arsenic volatilization upon heating. Niobium Arsenide, a Weyl semimetal, is a type of semiconductor and photoelectric material in applications for semiconductor, photo optic, laser light-emitting diodes, quantum dots, optical and pressure sensors, as intermediates, and to fabricate superconductor etc. Niobium Arsenide Nb₅As₃ or NbAs at Western Minmetals (SC) Corporation with purity of 99.99% 4N can be delivered in shape of powder, granule,  lump, chunk, target and bulk crystal etc or as customized specification, which should be kept in a well-closed, light-resistant, dry and cool place.

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