OEM Supply Indium Phosphide Ingots - Single Crystal Germanium Wafer / Ingot – WMC

Inquiry now

Details

No.	Items	Standard Specification
1	Single Crystal Germanium Wafer
1-1	Diameter	2″	3″	4″	6″
1-2	Diameter mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
1-3	Growth Method	VGF or CZ
1-4	Conductivity	P/(Ga or In), N/Sb, Un-doped
1-5	Orientation	(100)±0.5°	(100)±0.5°	(100)±0.5°	(100)±0.5°
1-6	Thickness μm	145, 175, (500-1000)
1-7	Resistivity Ω-cm	0.001-50
1-8	Mobility cm2/V.s	>200	>200	>200	>200
1-9	TTV μm max	5, 8, 10	5, 8, 10	5, 8, 10	5, 8, 10
1-10	Bow μm max	15	15	15	15
1-11	Warp μm max	15	15	15	15
1-12	Dislocation cm-2 max	300	300	300	300
1-13	EPD cm-2	<4000
1-14	Particle Counts a/wafer max	10 (at ≥0.5μm)
1-15	Surface Finish	P/E, P/P or as required
1-16	Packing	Single wafer container or cassette inside, carton box outside
2	Single Crystal Germanium Ingot or Bar
2-1	Diameter mm	12-300, 150-200
2-2	Type	N type (As, In, Sb), P Type(Ca)
2-3	Resistivity Ω-cm	0.1-50
2-4	Carrier Lifetime μs	80-600
2-5	Length mm	140-300
2-6	Packing	Sealed in plastic bag or foam box inside, carton box outside
2-7	Remark	Poly crystal ingot also available upon request