High quality single crystal Gallium Phosphide GaP wafer or substrate p-type, n-type or undoped conductivity at Western Minmetals (SC) Corporation can be offered in size of 2″ and 3” (50mm, 75mm) in diameter, orientation <100>, <111> with surface finish of as-cut, lapped, etched, polished, epi-ready processed in single wafer container sealed in aluminum composite bag or as customized specification to the perfect solution.
| No. | Items | Standard Specification |
| 1 | GaP Size | 2″ |
| 2 | Diameter mm | 50.8 ± 0.5 |
| 3 | Growth Method | LEC |
| 4 | Conductivity Type | P-type/Zn-doped, N-type/(S, Si,Te)-doped, Un-doped |
| 5 | Orientation | <1 1 1> ± 0.5° |
| 6 | Thickness μm | (300-400) ± 20 |
| 7 | Resistivity Ω-cm | 0.003-0.3 |
| 8 | Orientation Flat (OF) mm | 16±1 |
| 9 | Identification Flat (IF) mm | 8±1 |
| 10 | Hall Mobility cm2/V.s min | 100 |
| 11 | Carrier Concentration cm-3 | (2-20) E17 |
| 12 | Dislocation Density cm-2 max | 2.00E+05 |
| 13 | Surface Finish | P/E, P/P |
| 14 | Packing | Single wafer container sealed in aluminum composite bag, carton box outside |
| Linear Formula | GaP |
| Molecular Weight | 100.7 |
| Crystal structure | Zinc blende |
| Apperance | Orange solid |
| Melting Point | N/A |
| Boiling Point | N/A |
| Density at 300K | 4.14 g/cm3 |
| Energy Gap | 2.26 eV |
| Intrinsic resistivity | N/A |
| CAS Number | 12063-98-8 |
| EC Number | 235-057-2 |
- Sample Available Upon Request
- Safety Delivery of Goods By Courier/Air/Sea
- COA/COC Quality Management
- Secure & Convenient Packing
- UN Standard Packing Available Upon Request
- ISO9001:2015 Certified
- CPT/CIP/FOB/CFR Terms By Incoterms 2010
- Flexible Payment Terms T/T D/P L/C Acceptable
- Full Dimensional After-Sale Services
- Quality Inspection By Sate-of-the-art Facility
- Rohs/REACH Regulations Approval
- Non-Disclosure Agreements NDA
- Non-Conflict Mineral Policy
- Regular Environmental Management Review
- Social Responsibility Fulfillment
