No. | Items | Standard Specification | ||
1 | Shape | Circular | Circular | Square |
2 | Size | 2″ | 4″ | – |
3 | Diameter mm | 50.8±0.5 | 100±0.5 | – |
4 | Side Length mm | – | – | 10×10 or 10×5 |
5 | Growth Method | HVPE | HVPE | HVPE |
6 | Orientation | C-plane (0001) | C-plane (0001) | C-plane (0001) |
7 | Conductivity Type | N/(Si-doped or un-doped), Semi-insulating | ||
8 | Resistivity Ω-cm | <0.1, <0.05, >1E6 | ||
9 | Thickness μm | 350±25 | 350±25 | 350±25 |
10 | TTV μm max | 15 | 15 | 15 |
11 | Bow μm max | 20 | 20 | 20 |
12 | EPD cm-2 | <5E8 | <5E8 | <5E8 |
13 | Surface Finish | P/E, P/P | P/E, P/P | P/E, P/P |
14 | Surface Roughness | Front: ≤0.2nm, Back: 0.5-1.5μm or ≤0.2nm | ||
15 | Packing | Single wafer container sealed in Aluminum bag. |
Linear Formula | GaN |
Molecular Weight | 83.73 |
Crystal structure | Zinc blende or Wurtzite |
Apperance | Translucent solid |
Melting Point | 2500 °C |
Boiling Point | N/A |
Density at 300K | 6.15 g/cm3 |
Energy Gap | (3.2-3.29) eV at 300K |
Intrinsic resistivity | >1E8 Ω-cm |
CAS Number | 25617-97-4 |
EC Number | 247-129-0 |