No. | Items | Standard Specification | |
1 | Size | 2″, 3″, 4″, 5″, 6″, 8″, 9.5″, 10″, 12″ | |
2 | Diameter mm | 50.8-241.3, or as required | |
3 | Growth Method | CZ, MCZ, FZ, FZ-NTD | |
4 | Conductivity Type | P-type / Boron doped, N-type / Phosphide doped or Un-doped | |
5 | Length mm | ≥180 or as required | |
6 | Orientation | <100>, <110>, <111> | |
7 | Resistivity Ω-cm | As required | |
8 | Carbon Content a/cm3 | ≤5E16 or as required | |
9 | Oxygen Content a/cm3 | ≤1E18 or as required | |
10 | Metal Contamination a/cm3 | <5E10 (Cu, Cr, Fe, Ni) or <3E10 (Al, Ca, Na, K, Zn) | |
11 | Packing | Plastic bag inside, plywood case or carton box outside. |
Symbol | Si |
Atomic Number | 14 |
Atomic Weight | 28.09 |
Element Category | Metalloid |
Group, Period, Block | 14, 3, P |
Crystal structure | Diamond |
Color | Dark gray |
Melting Point | 1414°C, 1687.15 K |
Boiling Point | 3265°C, 3538.15 K |
Density at 300K | 2.329 g/cm3 |
Intrinsic resistivity | 3.2E5 Ω-cm |
CAS Number | 7440-21-3 |
EC Number | 231-130-8 |
Single Crystal Silicon Ingot, when completely grown and qualified its resistivity, impurity content, crystal perfection, size and weight, is grounded using diamond wheels to make it a perfect cylinder to the right diameter, then undergoes an etching process to remove the mechanical defects left by the grinding process. Afterwards the cylindrical ingot is cut into blocks with certain length, and is given notch and primary or secondary flat by automated wafer handling systems for alignment to identify the crystallographic orientation and conductivity before downstream wafer slicing process.