Silicon-on-insulator(SOI)

Silicon-on-insulator (SOI) 6” 8”, adopts silicon-oxide-silicon advanced technology contains major steps such as, oxygen implantation, cleaning, bonding, annealing and polishing, by which it is allowed to provide a greater performance during IC components design and manufacturing, because of lower stray capacity, temperature dependency or leakage currents, but a much higher latchup resistance, power efficiency and a more stable radiation frequency. Device layer up to 100 micrometer thickness is available.

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Technical Specifications:

No.	Items		Standard Specifications
1	General	Grade	TM	TM+EPI	Bonding	Cavity
		Size	8"	8"	6" 8"	6" 8"
		Diameter mm	200	200	150 or 200	150 or 200
		Orientation	<100> <110> <111>
2	Device layer	Growth Method	CZ or FZ	CZ or FZ	CZ or FZ	CZ or FZ
		Conductivity	P/N	P/N	P/N	P/N
		Resistivity Ω∙cm	As required
		Thickness μm	0.07-0.5	1.2-5	1.5-100	1.5-100
		Thickness Uniformity μm	±0.01	±0.1	±0.3	±0.3
		Surface Roughness nm	<0.2 (RMS, measured by AFM)
		Light Point Defect	<20ea, at 0.2μm
		Metals Contamination	5E10 (Na, Al, Ni, Cr, Fe, Cu, Zn, Ca)a/cm³ max
3	Buried Oxide Layer	Thermally Thickness μm	0.02-3	0.02-3	0.02-3	0.02-3
3	Buried Oxide Layer	Thickness Uniformity	±3%	±3%	±3%	±3%
4	Handle Substrate	Growth Method	CZ or FZ	CZ or FZ	CZ or FZ	CZ or FZ
		Conductivity Type	P/N	P/N	P/N	P/N
		Resistivity Ω∙cm	As required
		Thickness μm	As required
5	Packing	Cassette inside, carton box outside

Basic Material Parameters:

Symbol	Si
Atomic Number	14
Atomic Weight	28.09
Element Category	Metalloid
Group, Period, Block	14, 3, P
Crystal structure	Diamond
Color	Dark gray
Melting Point	1414°C, 2577.2°F, 1687.15 K
Boiling Point	3265°C, 5909°F, 3538.15 K
Density at 300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
CAS Number	7440-21-3
EC Number	231-130-8