Single Crystal Germanium Wafer / Ingot

Description

Single Crystal Germanium Wafer/Ingot or monocrystalline germanium is silver grey color appearance, melting point 937°C, density 5.33 g/cm³. A crystalline germanium is brittle and has little plasticity at room temperature. High purity germanium is obtained by zone floating and doped with indium and gallium or antimony to gain n-type or p-type conductivity, which has high electron mobility and high hole mobility, and can be electrically heated for anti-fogging or anti-icing applications. Single Crystal Germanium is grown by Vertical Gradient Freeze VGF technology to ensure it chemical stability, corrosion resistance, good transmittance, very high refractive index and high degree of lattice perfection.

Applications

Single Crystal Germanium finds promising and wide applications, in which electronic grade is used for diodes and transistors, Infrared or optical grade germanium blank or window is for IR optical window or disks, optical components used in night vision and thermographic imaging solutions for security, remote temperature measurement, fire fighting and industrial monitoring equipment, lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. Cell grade is for substrates used in III-V triple-junction solar cells and for power Concentrated PV systems of solar cell etc.

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Technical Specification

Single Crystal Germanium

Single Crystal Germanium Wafer or Ingot with n-type, p-type and un-doped conductivity and orientation <100> at Western Minmetals (SC) Corporation can be delivered in size of 2, 3, 4 and 6 inch diameter (50mm, 75mm, 100mm and 150mm) with surface finish of etched or polished in package of foam box or cassette for wafer and in sealed plastic bag for ingot with carton box outside, polycrystalline germanium ingot is also available upon request, or as customized specification to achieve the perfect solution.

Symbol	Ge
Atomic Number	32
Atomic Weight	72.63
Element Category	Metalloid
Group, Period, Block	14, 4, P
Crystal structure	Diamond
Color	Grayish white
Melting Point	937°C, 1211.40K
Boiling Point	2833°C, 3106K
Density at 300K	5.323 g/cm³
Intrinsic resistivity	46 Ω-cm
CAS Number	7440-56-4
EC Number	231-164-3

No.	Items	Standard Specification
1	Germanium Wafer	2"	3"	4"	6"
2	Diameter mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Growth Method	VGF or CZ	VGF or CZ	VGF or CZ	VGF or CZ
4	Conductivity	P-type / doped (Ga or In), N-type/ doped Sb, Un-doped
5	Orientation	(100)±0.5°	(100)±0.5°	(100)±0.5°	(100)±0.5°
6	Thickness μm	145, 175, (500-1000)
7	Resistivity Ω-cm	0.001-50	0.001-50	0.001-50	0.001-50
8	Mobility cm2/V.s	>200	>200	>200	>200
9	TTV μm max	5, 8, 10	5, 8, 10	5, 8, 10	5, 8, 10
10	Bow μm max	15	15	15	15
11	Warp μm max	15	15	15	15
12	Dislocation cm-2 max	300	300	300	300
13	EPD cm-2	<4000	<4000	<4000	<4000
14	Particle Counts a/wafer max	10 (at ≥0.5μm)	10 (at ≥0.5μm)	10 (at ≥0.5μm)	10 (at ≥0.5μm)
15	Surface Finish	P/E, P/P or as required
16	Packing	Single wafer container or cassette inside, carton box outside

No.	Items	Standard Specification
1	Germanium Ingot	2"	3"	4"	6"
2	Type	P-type / doped (Ga, In), N-type/ doped (As, Sb), Un-doped
3	Resistivity Ω-cm	0.1-50	0.1-50	0.1-50	0.1-50
4	Carrier Lifetime μs	80-600	80-600	80-600	80-600
5	Ingot Length mm	140-300	140-300	140-300	140-300
6	Packing	Sealed in plastic bag or foam box inside, carton box outside
7	Remark	Polycrystalline germanium ingot is available upon request

Single Crystal Germanium finds promising and wide applications, in which electronic grade is used for diodes and transistors, Infrared or optical grade germanium blank or window is for IR optical window or disks, optical components used in night vision and thermographic imaging solutions for security, remote temperature measurement, fire fighting and industrial monitoring equipment, lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. Cell grade is for substrates used in III-V triple-junction solar cells and for power Concentrated PV systems of solar cell etc.