Single Crystal Silicon Ingot

Description

Single Crystal Silicon Ingot is usually grown as a large cylindrical ingot by accurate doping and pulling technologies Czochralski CZ, Magnetic field induced Czochralski MCZ and Floating Zone FZ methods. CZ method is the most widely used for silicon crystal growth of large cylindrical ingots in diameters up to 300mm used in the electronics industry to make semiconductor devices. MCZ method is a variation of the CZ method in which a magnetic field created by an electromagnet, which can achieve low oxygen concentration comparatively, lower impurity concentration, lower dislocation and uniform resistivity variation. FZ method facilitates the achievement of high resistivity above 1000 Ω-cm and high-purity crystal with low oxygen content.

Delivery

Single Crystal Silicon Ingot CZ, MCZ, FZ or FZ NTD with n-type or p-type conductivity at Western Minmetals (SC) Corporation can be delivered in size of 50mm, 75mm, 100mm, 125mm, 150mm and 200mm diameter (2, 3, 4, 6 and 8 inch), orientation <100>, <110>, <111> with surface grounded in package of plastic bag inside with carton box outside, or as customized specification to reach the perfect solution.

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Technical Specification

Single Crystal Silicon Ingot

Single Crystal Silicon Ingot CZ, MCZ, FZ or FZ NTD with n-type or p-type conductivity at Western Minmetals (SC) Corporation can be delivered in size of 50mm, 75mm, 100mm, 125mm, 150mm and 200mm diameter (2, 3, 4, 6 and 8 inch), orientation <100>, <110>, <111> with surface grounded in package of plastic bag inside with carton box outside, or as customized specification to reach the perfect solution.

No.	Items	Standard Specification
1	Size	2", 3", 4", 5", 6", 8", 9.5", 10", 12"
2	Diameter mm	50.8-241.3, or as required
3	Growth Method	CZ, MCZ, FZ, FZ-NTD
4	Conductivity Type	P-type / Boron doped, N-type / Phosphide doped or Un-doped
5	Length mm	≥180 or as required
6	Orientation	<100>, <110>, <111>
7	Resistivity Ω-cm	As required
8	Carbon Content a/cm³	≤5E16 or as required
9	Oxygen Content a/cm³	≤1E18 or as required
10	Metal Contamination a/cm³	<5E10 (Cu, Cr, Fe, Ni) or <3E10 (Al, Ca, Na, K, Zn)
11	Packing	Plastic bag inside, plywood case or carton box outside.

Symbol	Si
Atomic Number	14
Atomic Weight	28.09
Element Category	Metalloid
Group, Period, Block	14, 3, P
Crystal structure	Diamond
Color	Dark gray
Melting Point	1414°C, 1687.15 K
Boiling Point	3265°C, 3538.15 K
Density at 300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
CAS Number	7440-21-3
EC Number	231-130-8

Single Crystal Silicon Ingot, when completely grown and qualified its resistivity, impurity content, crystal perfection, size and weight, is grounded using diamond wheels to make it a perfect cylinder to the right diameter, then undergoes an etching process to remove the mechanical defects left by the grinding process. Afterwards the cylindrical ingot is cut into blocks with certain length, and is given notch and primary or secondary flat by automated wafer handling systems for alignment to identify the crystallographic orientation and conductivity before downstream wafer slicing process.