Gallium Phosphide GaP Wafer, with low current and high efficiency in light emitting, is suitable for optical display systems as low-cost red, orange, and green light-emitting diodes (LEDs) and backlight of yellow and green LCD etc and LED chips manufacturing with low to medium brightness, GaP is also adopted widely as the basic substrate for the infrared sensors and monitoring cameras manufacturing.
| Linear Formula | GaP |
| Molecular Weight | 100.7 |
| Crystal structure | Zinc blende |
| Apperance | Orange solid |
| Melting Point | N/A |
| Boiling Point | N/A |
| Density at 300K | 4.14 g/cm3 |
| Energy Gap | 2.26 eV |
| Intrinsic resistivity | N/A |
| CAS Number | 12063-98-8 |
| EC Number | 235-057-2 |
| No. | Items | Standard Specification |
| 1 | GaP Size | 2″ |
| 2 | Diameter mm | 50.8 ± 0.5 |
| 3 | Growth Method | LEC |
| 4 | Conductivity Type | P-type/Zn-doped, N-type/(S, Si,Te)-doped, Un-doped |
| 5 | Orientation | (111) ± 0.5° |
| 6 | Thickness μm | (300-400) ± 20 |
| 7 | Resistivity Ω-cm | 0.003-0.3 |
| 8 | Orientation Flat (OF) mm | 16±1 |
| 9 | Identification Flat (IF) mm | 8±1 |
| 10 | Hall Mobility cm2/V.s min | 100 |
| 11 | Carrier Concentration cm-3 | (2-20)E17 |
| 12 | Dislocation Density cm-2 max | 2.00E+05 |
| 13 | Surface Finish | P/E, P/P |
| 14 | Packing | Single wafer container sealed in Aluminum bag. |
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