Trending Products Al2o3 Substrates - Silicon Carbide SiC – WMC

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Details

No.	Items	Standard Specification
1	Size	2″	3″	4″	6″
2	Diameter mm	50.8 0.38	76.2 0.38	100 0.5	150 0.5
3	Growth Method	MOCVD	MOCVD	MOCVD	MOCVD
4	Conductivity Type	4H-N, 6H-N, 4H-SI, 6H-SI
5	Resistivity Ω-cm	0.015-0.028; 0.02-0.1; >1E5
6	Orientation	0°±0.5°; 4.0° towards <1120>
7	Thickness μm	330±25	330±25	(350-500)±25	(350-500)±25
8	Primary Flat Location	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Primary Flat Length mm	16±1.7	22.2±3.2	32.5±2	47.5±2.5
10	Secondary Flat Location	Silicon face up: 90°, clockwise from prime flat ±5.0°
11	Secondary Flat Length mm	8±1.7	11.2±1.5	18±2	22±2.5
12	TTV μm max	15	15	15	15
13	Bow μm max	40	40	40	40
14	Warp μm max	60	60	60	60
15	Edge Exclusion mm max	1	2	3	3
16	Micropipe Density cm-2	<5, industrial; <15, lab; <50, dummy
17	Dislocation cm-2	<3000, industrial; <20000, lab; <500000, dummy
18	Surface Roughness nm max	1(Polished), 0.5 (CMP)
19	Cracks	None, for industrial grade
20	Hexagonal Plates	None, for industrial grade
21	Scratches	≤3mm, total length less than substrate diameter
22	Edge Chips	None, for industrial grade
23	Packing	Single wafer container sealed in Aluminum bag.