Zinc Telluride ZnTe | Cu2Te GeTe InTe PbTe Featured Image

Zinc Telluride ZnTe | Cu₂Te GeTe InTe PbTe

Description

Zinc Telluride ZnTe, 99.999% 5N purity, melting point 1238.5°C, density 6.34g/cm³, MW 193.988, CAS 1315-11-3, is of grey or brownish-red appearance. ZnTe crystal is a compound semiconductor of group II-VI elements in periodic table, which is prepared synthetically by chemical vapor deposition CVD, zone floating or other methods etc. Its normal crystal structure is face-centered cubic, zinc-blende, or sphalerite type, although it is also possible to grow hexagonal forms of each material. Zinc Telluride ZnTe is widely used in semiconductor materials and infrared materials, because of its P-type and wide band gap of 2.28ev at room temperature, and has the characteristics of photoconductivity, fluorescence and so on. Zinc Telluride ZnTe can also be used as optical rectification THz radiation source and detection material, in visible green light-emitting devices LEDs, solar cells, waveguides, modulators, laser diodes, components of microwave generators in optoelectronic field, a non-linear optical photorefractive material and other optoelectronic devices etc. Besides Telluride compounds find many application as electrolyte material, semiconductor dopant, QLED display, IC field etc and other material fields.

Delivery

Zinc Telluride ZnTe 5N 99.999% and Copper Telluride Cu₂Te, Germanium Telluride GeTe, Indium Telluride InTe, Lead Telluride PbTe with 4N 99.99% and 5N 99.999% purity at Western Minmetals (SC) Corporation can be delivered in form of powder -60mesh, -80mesh, granule 1-6mm, lump 1-20mm, chunk, bulk crystal, rod and substrate etc or as customized specification to reach perfect solution.

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Technical Specification

Telluride Compounds

Telluride Compounds refer to the metal elements and metalloid compounds, which have stoichiometric composition changing within a certain range to form a compound-based solid solution. Inter-metallic compound is of its excellent properties between the metal and ceramic, and become an important branch of the new structural materials. Telluride compounds of Antimony Telluride Sb₂Te₃, Aluminum Telluride Al₂Te₃, Arsenic Telluride As₂Te₃, Bismuth Telluride Bi₂Te₃, Cadmium Telluride CdTe, Cadmium Zinc Telluride CdZnTe, Cadmium Manganese Telluride CdMnTe or CMT, Copper Telluride Cu₂Te, Gallium Telluride Ga₂Te₃, Germanium Telluride GeTe, Indium Telluride InTe, Lead Telluride PbTe, Molybdenum Telluride MoTe₂, Tungsten Telluride WTe₂ and its (Li, Na, K, Be, Mg, Ca) compounds and Rare Earth compounds can be synthesized in form of powder, granule, lump, bar, substrate, bulk crystal and single crystal…

No.	Item	Standard Specification
No.	Item	Formula	Purity	Size & Packing
1	Zinc Telluride	ZnTe	5N	-60mesh, -80mesh powder, 1-20mm irregular lump, 1-6mm granule, target or blank. 500g or 1000g in polyethylene bottle or composite bag, carton box outside. Telluride compounds composition is available upon request. Special specification and application can be customized for perfect solution
2	Arsenic Telluride	As₂Te₃	4N 5N
3	Antimony Telluride	Sb₂Te₃	4N 5N
4	Aluminum Telluride	Al₂Te₃	4N 5N
5	Bismuth Telluride	Bi₂Te₃	4N 5N
6	Copper Telluride	Cu₂Te	4N 5N
7	Cadmium Telluride	CdTe	5N 6N 7N
8	Cadmium Zinc Telluride	CdZnTe, CZT	5N 6N 7N
9	Cadmium Manganese Telluride	CdMnTe, CMT	5N 6N
10	Gallium Telluride	Ga₂Te₃	4N 5N
11	Germanium Telluride	GeTe	4N 5N
12	Indium Telluride	InTe	4N 5N
13	Lead Telluride	PbTe	5N
14	Molybdenum Telluride	MoTe₂	3N5
15	Tungsten Telluride	WTe₂	3N5

Copper Telluride

Copper Telluride Cu₂Te, light gray-black appreance, CAS 12019-52-2, MW 254.692, density 7.27g/cm³, melting point 900°C, odorless, is a transition metal chalcogenide and 2D layered material, and stable in air at room temperature. Copper Telluride Cu₂Te crystal compound with single crystal orthorhombic structure, is successfully synthesized by using an electrochemical method and a straightforward approach based on chemical deposition method CVD, it has fascinating physical, chemical, mechanical, electronic, photoelectric and thermal properties for various technological applications in optics, catalysis, energy storage, electronic devices and sensors, mainly used in precision semiconductor and optoelectronic materials. Copper Telluride at Western Minmetals (SC) Corporation with 99.99% 4N, 99.999% 5N purity are available in form of powder, granule, lump, chunk, bulk crystal and rod etc or as customized specification for industry and research purposes.

Indium Telluride

Indium Telluride InTe, molecular weight 242.4, density of 6.29 g/cm³, melting point is 696°C, black or blue-gray crystal, is stable in air, insoluble in hydrochloric acid and soluble in nitric acid. Heating in vacuum is easy to volatilize, and the vapor is stable and does not decompose. Indium Telluride has strong anisotropy and metal conductivity. Indium Telluride InTe, a compound semiconductor, which structure of tetragonal crystal is lamellar, prepared by chemical vapor deposition CVD process or by Bridgeman method with direct reaction of indium and tellurium. The only commercially available layered InTe crystal, which has band-gap at around 0.6 eV and display strong photoluminescence. Indium Telluride is generally n-type material, and mainly used in semiconductor industry, sensor parts, lens coating, and for making infrared detectors, or other research purpose. Indium Telluride InTe 99.99% 4N, 99.999% 5N purity at Western Minmetals (SC) Corporation are available in form of powder, lump, granule, lump, bulk crystal and rod etc for industry applications.

Germanium Telluride

Germanium Telluride GeTe, is black crystal, CAS 12025-39-7, MW 200.24, density 6.14g/cm³, melting point 725°C, and insoluble in water. Germanium Telluride crystal is an ionic crystal and compound semiconductor, which has a direct band gap of 0.23eV wide at room temperature, and belongs to narrow energy gap semiconductor. It is stable under normal temperature and pressure, and shows semimetallic conduction and ferroelectric. There are three major crystalline forms of this product, room-temperature α (rhombohedral) and γ (orthorhombic) structures and high-temperature β (cubic, rocksalt-type) phase, α phase being most common one. Germanium Telluride, a novel 2D material, has attracted much attention due to its excellent electronic and optical properties. The preparation of Germanium Telluride is by heating Germanium and Tellurium to their melting point in a vacuum quartz tube and recrystallizing to obtain GeTe, but single crystal GeTe can be obtained by zone floating method. It is used as a material for infrared light emission and detection. Meanwhile, Germanium telluride is a well-known phase change material PCM used in non-volatile memory cells and radio frequency switches. Germanium Telluride at Western Minmetals (SC) Corporation can be delivered with 99.99% 4N, 99.999% 5N purity in form of powder, lump, chunk, bulk crystal chunk and rod etc or as customized specification.

Lead Telluride

Lead Telluride PbTe, CAS 1314-91-6, MW 334.80, melting point 905°C, Insoluble in water and acid, ionic crystal, is a direct band gap semiconductor with band gap width of 0.32ev at room temperature. The materials of PbTe is prepared by Bridgeman method, chemical mechanical deposition method and sublimation recrystallization method. Lead Telluiide PbTe is a polar semiconductor crystallizing in the rocksalt-type lattice, exhibits unusual properties relative to other semiconductors which possess high dielectric constant, high mobility, and narrow fundamental gaps whose temperature coefficient is positive. Lead Telluride is of technical importance for use in a variety of infrared optoelectronic device, infrared photodetector application, and for very low threshold-current laser diodes, and can also be used as thermoelectric materials. Lead Telluride PbTe at Western Mimetals (SC) Corporation can be delivered in 99.99% 4N, 99.999% 5N purity with form of powder, granule, lump, chunk, bulk crystal and rod etc or as customized specification for industry and research purposes.

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